參數(shù)資料
型號: CY7C1165V18-300BZC
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 18-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
中文描述: 512K X 36 QDR SRAM, 0.45 ns, PBGA165
封裝: 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FPBGA-165
文件頁數(shù): 27/29頁
文件大小: 956K
代理商: CY7C1165V18-300BZC
CY7C1161V18
CY7C1176V18
CY7C1163V18
CY7C1165V18
Document Number: 001-06582 Rev. *C
Page 27 of 29
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CY7C1176V18-333BZXC
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CY7C1165V18-333BZXC
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CY7C1176V18-333BZI
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CY7C1165V18-333BZI
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CY7C1176V18-333BZXI
CY7C1163V18-333BZXI
CY7C1165V18-333BZXI
CY7C1161V18-300BZC
CY7C1176V18-300BZC
CY7C1163V18-300BZC
CY7C1165V18-300BZC
CY7C1161V18-300BZXC
CY7C1176V18-300BZXC
CY7C1163V18-300BZXC
CY7C1165V18-300BZXC
CY7C1161V18-300BZI
CY7C1176V18-300BZI
CY7C1163V18-300BZI
CY7C1165V18-300BZI
CY7C1161V18-300BZXI
CY7C1176V18-300BZXI
CY7C1163V18-300BZXI
CY7C1165V18-300BZXI
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
Commercial
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
Industrial
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free
300
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
Commercial
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
Industrial
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free
Ordering Information
(continued)
Not all of the speed, package and temperature ranges are available. Contact your local sales representative or visit
www.cypress.com
for actual products offered.
Speed
(MHz)
Ordering Code
Package
Diagram
Package Type
Operating
Range
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相關(guān)PDF資料
PDF描述
CY7C1165V18-300BZI 18-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
CY7C1165V18-300BZXC 18-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
CY7C1165V18-300BZXI 18-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
CY7C1165V18-333BZC 18-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
CY7C1165V18-333BZI 18-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY7C1165V18-300BZXC 制造商:Cypress Semiconductor 功能描述:
CY7C1165V18-400BZXC 功能描述:靜態(tài)隨機(jī)存取存儲器 18M Q+, B4 2.5 LATENCY RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1165XC 制造商:Cypress Semiconductor 功能描述:
CY7C11681KV18-400BZC 功能描述:靜態(tài)隨機(jī)存取存儲器 1Mb x 18 400 MHz Sync 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C11681KV18-400BZXC 功能描述:靜態(tài)隨機(jī)存取存儲器 1Mb x 18 400 MHz Sync 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray