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參數(shù)資料
| 型號： | CY7C1041CV33-20ZXC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 4-Mbit (256K x 16) Static RAM |
| 中文描述： | 256K X 16 STANDARD SRAM, 20 ns, PDSO44 |
| 封裝： | LEAD FREE, TSOP2-44 |
| 文件頁數(shù)： | 4/12頁 |
| 文件大?。?/td> | 595K |
| 代理商： | CY7C1041CV33-20ZXC |
CY7C1041CV33
Document #: 38-05134 Rev. *H
Page 4 of 12
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................–65
°
C to +150
°
C
Ambient Temperature with
Power Applied.............................................–55
°
C to +125
°
C
Supply Voltage on V
CC
to Relative GND
[2]
....–0.5V to +4.6V
DC Voltage Applied to Outputs
in High-Z State
[2]
....................................–0.5V to V
CC
+ 0.5V
DC Input Voltage
[2]
.................................–0.5V to V
CC
+ 0.5V
Current into Outputs (LOW).........................................20 mA
Static Discharge Voltage............. ...............................>2001V
(per MIL-STD-883, Method 3015)
Latch-up Current...................................................... >200 mA
Operating Range
Range
Ambient
Temperature
0
°
C to +70
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
–40
°
C to +125
°
C
V
CC
Commercial
Industrial
Automotive-A
Automotive-E
3.3V ± 0.3V
DC Electrical Characteristics
Over the Operating Range
Parameter
V
OH
V
OL
V
IH
Description
Output HIGH Voltage V
CC
= Min., I
OH
= –4.0 mA
Output LOW Voltage V
CC
= Min., I
OL
= 8.0 mA
Input HIGH Voltage
Test Conditions
-10
-12
-15
-20
Unit
V
V
V
Min.
2.4
Max.
Min.
2.4
Max.
Min.
2.4
Max.
Min.
2.4
Max.
0.4
V
CC
+ 0.3
0.8
+1
+1
0.4
V
CC
+ 0.3
0.8
+1
0.4
V
CC
+ 0.3
0.8
+1
0.4
V
CC
+ 0.3
0.8
+1
+1
+20
+1
+1
+20
75
85
85
90
40
40
45
10
10
15
2.0
2.0
2.0
2.0
V
IL[2]
I
IX
Input LOW Voltage
Input Leakage
Current
–0.3
–1
–1
–0.3
–1
–0.3
–1
–0.3
–1
–1
–20
–1
–1
–20
V
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
GND < V
I
< V
CC
Com’l/Ind’l
Auto-A
Auto-E
Com’l/Ind’l
Auto-A
Auto-E
Com’l
Ind’l
Auto-A
Auto-E
Com’l/Ind’l
Auto-A
Auto-E
Com’l/Ind’l
Auto-A
Auto-E
I
OZ
Output Leakage
Current
GND < V
OUT
< V
CC
,
Output Disabled
–1
–1
+1
+1
–1
+1
–1
+1
I
CC
V
CC
Operating
Supply Current
V
CC
= Max.,
f = f
MAX
= 1/t
RC
90
100
100
85
95
80
90
I
SB1
Automatic CE
Power-down Current
—TTL Inputs
Max. V
CC
,
CE > V
IH
V
IN
> V
IH
or
V
IN
< V
IL
, f = f
MAX
Max. V
CC
,
CE > V
CC
– 0.3V,
V
IN
> V
CC
– 0.3V,
or V
IN
< 0.3V, f = 0
40
40
40
40
I
SB2
Automatic CE
Power-down Current
—CMOS Inputs
10
10
10
10
Capacitance
[3]
Parameter
Description
Test Conditions
Max.
8
8
Unit
pF
pF
C
IN
C
OUT
Notes:
2. V
(min.) = –2.0V and V
(max) = V
+ 0.5V for pulse durations of less than 20 ns.
3. Tested initially and after any design or process changes that may affect these parameters.
Input Capacitance
I/O Capacitance
T
A
= 25
°
C, f = 1 MHz, V
CC
= 3.3V
[+] Feedback
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1041CV33-20ZXCT | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1041CV33-20ZXE | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1041CV33-20ZXI | 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述: |
| CY7C1041CV33-25VC | 制造商:Cypress Semiconductor 功能描述:4MB (256K X 16)- FAST ASYNCH SRAM - Bulk |
| CY7C1041CV33-8ZSXI | 功能描述:靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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