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參數(shù)資料
| 型號： | CY7C1032-10JC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 64K x 18 Synchronous Cache RAM |
| 中文描述： | 64K X 18 CACHE SRAM, 10 ns, PQCC52 |
| 封裝： | PLASTIC, LCC-52 |
| 文件頁數(shù)： | 5/13頁 |
| 文件大小： | 282K |
| 代理商： | CY7C1032-10JC |
CY7C1031
CY7C1032
Document #: 38-05278 Rev. *A
Page 5 of 13
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ...................................–65
°
C to +150
°
C
Ambient Temperature with
Power Applied...............................................–55
°
C to +125
°
C
Supply Voltage on V
CC
Relative to GND............–0.5V to +7.0V
DC Voltage Applied to Outputs
in High-Z State
[2]
...............................................–0.5V to V
CC
+ 0.5V
DC Input Voltage
[2]
...........................................–0.5V to V
CC
+ 0.5V
Current into Outputs (LOW).........................................20 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Operating Range
Range
Com’l
Ambient
Temperature
[3]
0
°
C to +70
°
C
V
CC
V
CCQ
5V
±
5%
3.0V to V
CC
Electrical Characteristics
Over the Operating Range
[4]
Parameter
V
OH
V
OL
V
IH
V
IL
I
X
I
OZ
Description
Test Conditions
V
CC
= Min., I
OH
= –4.0 mA
V
CC
= Min., I
OL
= 8.0 mA
7C1031-8
7C1032-8
Min.
2.4
7C1031-10
7C1032-10
Min.
2.4
7C1031-12
Unit
V
V
V
V
μ
A
μ
A
Max.
V
CCQ
0.4
V
CC
+
0.3V
0.8
1
5
Max.
V
CCQ
0.4
V
CC
+
0.3V
0.8
1
5
Min.
2.4
Max.
V
CCQ
0.4
V
CC
+
0.3V
0.8
1
5
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
[2]
Input Load Current
Output Leakage Current
2.2
–0.3
–1
–5
2.2
–0.3
–1
–5
2.2
–0.3
–1
–5
GND
≤
V
I
≤
V
CC
GND
≤
V
I
≤
V
CC
, Output
Disabled
V
CC
= Max., V
OUT
= GND
I
OS
Output Short Circuit
Current
[5]
V
CC
Operating Supply
Current
–300
–300
–300
mA
I
CC
V
CC
= Max.,
I
OUT
= 0 mA,
f = f
MAX
= 1/t
CYC
Max. V
CC
, CS
≥
V
IH
, V
IN
V
IH
or
V
IN
≤
V
IL
, f = f
MAX
Max. V
CC
, CS
≥
V
CC
– 0.3V, V
IN
≥
V
CC
– 0.3V or V
IN
≤
0.3V, f = 0
[6]
Com’l
280
280
230
mA
I
SB1
Automatic CE
Power-down
Current—TTL Inputs
Automatic CE
Power-down Current —
CMOS Inputs
Com’l
80
80
60
mA
I
SB2
Com’l
30
30
30
mA
Capacitance
[7]
Parameter
Description
Test Conditions
Max.
4.5
5
8
Unit
pF
pF
pF
C
IN
: Addresses
C
IN
: Other Inputs
C
OUT
Notes:
2. Minimum voltage equals –2.0V for pulse durations of less than 20 ns.
3. T
is the case temperature.
4. See the last page for Group A subgroup testing information.
5. Not more than one output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds.
6. Inputs are disabled, clock is allowed to run at speed.
7. Tested initially and after any design or process changes that may affect these parameters.
Input Capacitance
T
A
= 25
°
C, f = 1 MHz,
V
CC
= 5.0V
Com’l
Com’l
Com’l
Output Capacitance
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