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參數(shù)資料
| 型號： | CY7C1021CV26 |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | 1-Mbit (64K x 16) Static RAM |
| 中文描述： | 1兆位（64K的× 16）靜態(tài)RAM |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 247K |
| 代理商： | CY7C1021CV26 |
1-Mbit (64K x 16) Static RAM
CY7C1021CV26
Cypress Semiconductor Corporation
Document #: 38-05589 Rev. **
3901 North First Street
San Jose
,
CA 95134
408-943-2600
Revised June 22, 2004
Features
Temperature Range
— Automotive: –40°C to 125°C
High speed
— t
AA
= 15 ns
Optimized voltage range: 2.5V–2.7V
Low active power: 360 mW (max.)
Automatic power-down when deselected
Independent control of upper and lower bits
CMOS for optimum speed/power
Package offered: 44-pin TSOP II
Functional Description
The CY7C1021CV26 is a high-performance CMOS static
RAM organized as 65,536 words by 16 bits. This device has
an automatic power-down feature that significantly reduces
power consumption when deselected.
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable
(BLE) is LOW, then data from I/O pins (I/O
1
through I/O
8
), is
written into the location specified on the address pins (A
0
through A
15
). If Byte High Enable (BHE) is LOW, then data
from I/O pins (I/O
9
through I/O
16
) is written into the location
specified on the address pins (A
0
through A
15
).
Reading from the device is accomplished by taking Chip
Enable (CE) and Output Enable (OE) LOW while forcing the
Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW,
then data from the memory location specified by the address
pins will appear on I/O
1
to I/O
8
. If Byte High Enable (BHE) is
LOW, then data from memory will appear on I/O
9
to I/O
16
. See
the truth table at the end of this data sheet for a complete
description of Read and Write modes.
The input/output pins (I/O
1
through I/O
16
) are placed in a
high-impedance state when the device is deselected (CE
HIGH), the outputs are disabled (OE HIGH), the BHE and BLE
are disabled (BHE, BLE HIGH), or during a Write operation
(CE LOW, and WE LOW).
Note:
1. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= V
, T
A
= 25°C.
Logic Block Diagram
64K x 16
RAM Array
512 X 2048
I/O
1
–I/O
8
R
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
COLUMN DECODER
A
9
A
1
A
1
A
1
A
1
A
1
A
1
S
DATA IN DRIVERS
OE
BLE
I/O
9
–I/O
16
CE
BHE
A
8
Selection Guide
CY7C1021CV26-15
15
80
10
Maximum Access Time (ns)
Maximum Operating Current (mA)
Maximum CMOS Standby Current (mA)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY7C1021CV26-15ZE | 1-Mbit (64K x 16) Static RAM |
| CY7C1021CV33-10BAXI | 1-Mbit (64K x 16) Static RAM |
| CY7C1021CV33-10VXC | 1-Mbit (64K x 16) Static RAM |
| CY7C1021CV33-10ZXC | 1-Mbit (64K x 16) Static RAM |
| CY7C1021CV33-10ZXI | 1-Mbit (64K x 16) Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1021CV26-15BAE | 功能描述:靜態(tài)隨機存取存儲器 64K X 16 2.6V RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1021CV26-15BAET | 功能描述:靜態(tài)隨機存取存儲器 64K X 16 2.6V RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1021CV26-15VXE | 功能描述:靜態(tài)隨機存取存儲器 64K X 16 2.6V RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1021CV26-15VXET | 功能描述:靜態(tài)隨機存取存儲器 64K X 16 2.6V RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1021CV26-15XEKJ | 制造商:Cypress Semiconductor 功能描述: |
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