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| 型號(hào)： | CY7C1020L-10ZC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 32K x 16 Static RAM |
| 中文描述： | 32K X 16 STANDARD SRAM, 10 ns, PDSO44 |
| 封裝： | TSOP2-44 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 147K |
| 代理商： | CY7C1020L-10ZC |
CY7C1020CV33
Document #: 38-05133 Rev. *B
Page 2 of 8
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................
–
65
°
C to +150
°
C
Ambient Temperature with
Power Applied.............................................
–
55
°
C to +125
°
C
Supply Voltage on V
CC
to Relative GND
[1]
....
–
0.5V to +4.6V
DC Voltage Applied to Outputs
in High-Z State
[1]
....................................
–
0.5V to V
CC
+ 0.5V
DC Input Voltage
[1]
................................
–
0.5V to V
CC
+ 0.5V
Current into Outputs (LOW).........................................20 mA
Static Discharge Voltage...........................................> 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current.....................................................> 200 mA
Operating Range
Range
Ambient Temperature
0
°
C to +70
°
C
–
40
°
C to +85
°
C
V
CC
Commercial
Industrial
3.3V
±
10%
3.3V
±
10%
Electrical Characteristics
Over the Operating Range
Parameter
V
OH
Description
Output HIGH Voltage V
CC
= Min.,
Test Conditions
1020CV33-10
Min.
2.4
1020CV33-12
Min.
2.4
1020CV33-15
Min.
2.4
Unit
V
Max.
Max.
Max.
I
OH
=
–
4.0 mA
V
CC
= Min.,
I
OL
= 8.0 mA
V
OL
Output LOW Voltage
0.4
0.4
0.4
V
V
IH
Input HIGH Voltage
2.0
V
CC
+
0.3
0.8
+1
+1
2.0
V
CC
+
0.3
0.8
+1
+1
2.0
V
CC
+
0.3
0.8
+1
+1
V
V
IL
I
IX
I
OZ
Input LOW Voltage
[1]
Input Load Current
Output
Leakage Current
Output Short
Circuit Current
V
CC
Operating
Supply Current
Automatic CE
Power-down Current
—
TTL Inputs
0.3
1
1
–
0.3
–
1
–
1
–
0.3
–
1
–
1
V
μ
A
μ
A
GND < V
I
< V
CC
GND < V
I
< V
CC
,
Output Disabled
V
CC
= Max.,
V
OUT
= GND
V
CC
= Max.,
I
OUT
= 0 mA,
f = f
MAX
= 1/t
RC
Max. V
CC
,
CE > V
IH
V
IN
> V
IH
or
V
IN
< V
IL
,
f = f
MAX
Max. V
CC
,
CE > V
CC
–
0.3V, V
IN
>
V
CC
–
0.3V,
or V
IN
< 0.3V, f = 0
I
OS[2]
300
–
300
–
300
mA
I
CC
90
85
80
mA
I
SB1
15
15
15
mA
I
SB2
Automatic CE
Power-down Current
—
CMOS Inputs
5
5
5
mA
Capacitance
[3]
Parameter
Description
Test Conditions
Max.
8
8
Unit
pF
pF
C
IN
C
OUT
Notes:
1.
2.
3.
Input Capacitance
Output Capacitance
T
A
= 25
°
C, f = 1 MHz,
V
CC
= 3.3V
V
(min.) =
–
2.0V for pulse durations of less than 20 ns.
Not more than one output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds.
Tested initially and after any design or process changes that may affect these parameters.
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