參數(shù)資料
型號(hào)： CY7C1020-10ZC
廠商： CYPRESS SEMICONDUCTOR CORP
元件分類： DRAM
英文描述： 32K x 16 Static RAM
中文描述： 32K X 16 STANDARD SRAM, 10 ns, PDSO44
封裝： TSOP2-44
文件頁(yè)數(shù)： 1/8頁(yè)
文件大小： 147K
代理商： CY7C1020-10ZC
32K x 16 Static RAM
CY7C1020CV33
Cypress Semiconductor Corporation
Document #: 38-05133 Rev. *B
3901 North First Street
San Jose
CA 95134
408-943-2600
Revised August 13, 2002
Features
Pin- and function-compatible with CY7C1020V33
High speed
—t
AA
= 10, 12, 15 ns
CMOS for optimum speed/power
Low active power
—360 mW (max.)
Automatic power-down when deselected
Independent control of upper and lower bits
Available in 44-pin TSOP II
Functional Description
The CY7C1020CV33 is a high-performance CMOS static
RAM organized as 32,768 words by 16 bits. This device has
an automatic power-down feature that significantly reduces
power consumption when deselected.
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable
(BLE) is LOW, then data from I/O pins (I/O
1
through I/O
8
), is
written into the location specified on the address pins (A
0
through A
14
). If Byte High Enable (BHE) is LOW, then data
from I/O pins (I/O
9
through I/O
16
) is written into the location
specified on the address pins (A
0
through A
14
).
Reading from the device is accomplished by taking Chip
Enable (CE) and Output Enable (OE) LOW while forcing the
Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW,
then data from the memory location specified by the address
pins will appear on I/O
1
to I/O
8
. If Byte High Enable (BHE) is
LOW, then data from memory will appear on I/O
9
to I/O
16
. See
the truth table at the back of this data sheet for a complete
description of read and write modes.
The input/output pins (I/O
1
through I/O
16
) are placed in a
high-impedance state when the device is deselected (CE
HIGH), the outputs are disabled (OE HIGH), the BHE and BLE
are disabled (BHE, BLE HIGH), or during a write operation (CE
LOW, and WE LOW).
The CY7C1020CV33 is available in standard 44-pin TSOP
Type II packages.
Selection Guide
1020CV33-10
10
90
5
1020CV33-12
12
85
5
1020CV33-15
15
80
5
Unit
ns
mA
mA
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
WE
A
4
Logic Block Diagram
Pin Configuration
TSOP II
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
31
30
32
36
35
34
33
37
40
39
38
Top View
41
44
43
42
16
17
29
28
V
CC
V
SS
I/O
5
I/O
6
A
14
A
13
A
NC
NC
A
3
A
2
A
1
A
0
OE
BHE
BLE
V
SS
V
CC
I/O
12
I/O
11
I/O
10
I/O
9
A
5
A
6
A
7
I/O
16
I/O
15
I/O
14
I/O
13
CE
I/O
1
I/O
2
I/O
3
I/O
4
NC
A
8
A
9
A
10
A
11
18
19
20
21
27
26
25
24
22
23
NC
I/O
7
I/O
8
32K
×
16
RAM Array
I/O
1
–
I/O
8
R
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
COLUMN DECODER
A
9
A
1
A
1
A
1
A
1
A
1
S
DATA IN DRIVERS
BLE
I/O
9
–
I/O
16
OE
WE
A
8
相關(guān)PDF資料
PDF描述
CY7C1020-12VC 32K x 16 Static RAM
CY7C1020CV33-10ZI 32K x 16 Static RAM
CY7C1020CV33-12ZC 32K x 16 Static RAM
CY7C1020CV33-12ZI 32K x 16 Static RAM
CY7C1020CV33-15ZC 32K x 16 Static RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY7C1020-12VC 制造商:Cypress Semiconductor 功能描述:
CY7C1020-15VC 制造商:Rochester Electronics LLC 功能描述:- Bulk
CY7C1020B-12VC 制造商:Rochester Electronics LLC 功能描述:512K (32K X 16)- FAST ASYNCH SRAM - Bulk
CY7C1020B-12VXC 功能描述:IC SRAM 512KBIT 12NS 44SOJ RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:移動(dòng) SDRAM 存儲(chǔ)容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2
CY7C1020B-12VXCT 功能描述:IC SRAM 512KBIT 12NS 44SOJ RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:移動(dòng) SDRAM 存儲(chǔ)容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2
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