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參數(shù)資料
| 型號(hào)： | CY7C1009B-20VXC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類(lèi)： | SRAM |
| 英文描述： | 128K X 8 STANDARD SRAM, 20 ns, PDSO32 |
| 封裝： | 0.300 INCH, LEAD FREE, SOJ-32 |
| 文件頁(yè)數(shù)： | 3/10頁(yè) |
| 文件大?。?/td> | 362K |
| 代理商： | CY7C1009B-20VXC |
CY7C109B
CY7C1009B
Document #: 38-05038 Rev. *C
Page 2 of 10
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65
°C to +150°C
Ambient Temperature with
Power Applied............................................. –55
°C to +125°C
Supply Voltage on VCC to Relative GND
[3] .... –0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State[3] ....................................–0.5V to VCC + 0.5V
DC Input Voltage[3].................................–0.5V to VCC + 0.5V
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage............................................ >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current ..................................................... >200 mA
Selection Guide
7C109B-12
7C1009B-12
7C109B-15
7C1009B-15
7C109B-20
7C1009B-20
Unit
Maximum Access Time
12
15
20
ns
Maximum Operating Current
90
80
75
mA
Maximum CMOS Standby Current
10
mA
Maximum CMOS Standby Current (L)
2
mA
Operating Range
Range
Ambient
Temperature
VCC
Commercial
0
°C to +70°C
5V
± 10%
Industrial
40°C to +85°C
5V
± 10%
Electrical Characteristics Over the Operating Range
Parameter
Description
Test Conditions
7C109B-12
7C1009B-12
7C109B-15
7C1009B-15
7C109B-20
7C1009B-20
Unit
Min.
Max.
Min.
Max.
Min.
Max.
VOH
Output HIGH Voltage VCC = Min., IOH = –4.0 mA
2.4
V
VOL
Output LOW Voltage VCC = Min., IOL = 8.0 mA
0.4
V
VIH
Input HIGH Voltage
2.2
VCC + 0.3
2.2
VCC + 0.3
2.2
VCC + 0.3
V
VIL
Input LOW Voltage[3]
–0.3
0.8
–0.3
0.8
–0.3
0.8
V
IIX
Input Leakage
Current
GND < VI < VCC
–1
+1
–1
+1
–1
+1
A
IOZ
Output Leakage
Current
GND < VI < VCC,
Output Disabled
–5
+5
–5
+5
–5
+5
A
ICC
VCC Operating
Supply Current
VCC = Max., IOUT = 0 mA,
f = fMAX = 1/tRC
90
80
75
mA
ISB1
Automatic CE
Power-Down Current
—TTL Inputs
Max. VCC, CE1 > VIH
or CE2 < VIL,VIN > VIH or
VIN < VIL, f = fMAX
45
40
30
mA
ISB2
Automatic CE
Power-Down Current
—CMOS Inputs
Max. VCC,
CE1 > VCC – 0.3V,
or CE2 < 0.3V,
VIN > VCC – 0.3V,
or VIN < 0.3V, f = 0
10
mA
L2
mA
Capacitance[4]
Parameter
Description
Test Conditions
Max.
Unit
CIN
Input Capacitance
TA = 25°C, f = 1 MHz,
VCC = 5.0V
9pF
COUT
Output Capacitance
8
pF
Notes:
3. Minimum voltage is–2.0V for pulse durations of less than 20 ns.
4. Tested initially and after any design or process changes that may affect these parameters.
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