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參數(shù)資料
| 型號(hào)： | CY7C1006B-20VC |
| 廠(chǎng)商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 256K x 4 Static RAM |
| 中文描述： | 256K X 4 STANDARD SRAM, 20 ns, PDSO28 |
| 封裝： | 0.300 INCH, SOJ-28 |
| 文件頁(yè)數(shù)： | 1/10頁(yè) |
| 文件大?。?/td> | 161K |
| 代理商： | CY7C1006B-20VC |
256K x 4 Static RAM
CY7C106B
CY7C1006B
Cypress Semiconductor Corporation
Document #: 38-05037 Rev. **
3901 North First Street
San Jose
CA 95134
408-943-2600
Revised August 24, 2001
1CY7C1006B
Features
High speed
—t
AA
=
12 ns
CMOS for optimum speed/power
Low active power
—495 mW
Low standby power
—275 mW
2.0V data retention (optional)
—
100
μ
W
Automatic power-down when deselected
TTL-compatible inputs and outputs
Functional Description
The CY7C106B and CY7C1006B are high-performance
CMOS static RAMs organized as 262,144 words by 4 bits.
Easy memory expansion is provided by an active LOW Chip
Enable (CE), an active LOW Output Enable (OE), and
three-state drivers. These devices have an automatic pow-
er-down feature that reduces power consumption by more
than 65% when the devices are deselected.
Writing to the devices is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. Data on the four I/O
pins (I/O
0
through I/O
3
) is then written into the location speci-
fied on the address pins (A
0
through A
17
).
Reading from the devices is accomplished by taking Chip En-
able (CE) and Output Enable (OE) LOW while forcing Write
Enable (WE) HIGH. Under these conditions, the contents of
the memory location specified by the address pins will appear
on the four I/O pins.
The four input/output pins (I/O
0
through I/O
3
) are placed in a
high-impedance state when the devices are deselected (CE
HIGH), the outputs are disabled (OE HIGH), or during a write
operation (CE and WE LOW).
The CY7C106B is available in a standard 400-mil-wide SOJ;
the CY7C1006B is available in a standard 300-mil-wide SOJ.
LogicBlock Diagram
Pin Configuration
C106B–1
C106B–2
512 x 512 x 4
ARRAY
A
1
A
2
A
3
A
4
A
5
A
0
A
1
A
1
A
1
A
1
A
1
COLUMN
DECODER
R
S
POWER
DOWN
OE
INPUTBUFFER
A
1
A
1
A
1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
20
19
18
17
21
24
23
22
Top View
SOJ
25
28
27
26
GND
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
9
A
CE
OE
A
17
A
16
A
15
A
14
A
13
A
12
A
11
V
CC
I/O
3
I/O
2
I/O
1
I/O
0
WE
A
0
NC
WE
CE
I/O
0
I/O
1
I/O
2
I/O
3
A
6
A
7
A
8
A
9
Selection Guide
7C106B-12
7C1006B-12
12
90
7C106B-15
7C1006B-15
15
80
7C106B-20
7C1006B-20
20
75
7C106B-25
7C1006B-25
25
70
7C106B-35
35
60
Maximum Access Time (ns)
Maximum Operating
Current (mA)
Maximum Standby
Current (mA)
50
30
30
30
25
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY7C1006B-20VI | 256K x 4 Static RAM |
| CY7C1006B-25VC | 256K x 4 Static RAM |
| CY7C1006B-25VI | 256K x 4 Static RAM |
| CY7C1010DV33 | 2-Mbit (256K x 8)Static RAM(2Mbit (256K x 8)靜態(tài)RAM) |
| CY7C1011CV33-15AC | 128K x 16 Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1006BN-15VC | 制造商:Cypress Semiconductor 功能描述:SRAM Chip Async Single 5V 1M-Bit 256K x 4-Bit 15ns 28-Pin SOJ |
| CY7C1006D-10VXI | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1M 512K FAST ASYNC 靜態(tài)隨機(jī)存取存儲(chǔ)器 IND RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪(fǎng)問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1006D-10VXIT | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1M 512K FAST ASYNC 靜態(tài)隨機(jī)存取存儲(chǔ)器 IND RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪(fǎng)問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1007B-12VC | 制造商:Rochester Electronics LLC 功能描述:1MB (1M X 1)- FAST ASYNCH SRAM - Bulk |
| CY7C1007B-15VC | 制造商:Rochester Electronics LLC 功能描述:1MB (1M X 1)- FAST ASYNCH SRAM - Bulk |
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