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參數(shù)資料
| 型號： | CY7C028V-20ACT |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | SRAM |
| 英文描述： | 3.3V 32K/64K x 16/18 Dual-Port Static RAM |
| 中文描述： | 64K X 16 DUAL-PORT SRAM, 20 ns, PQFP100 |
| 封裝： | PLASTIC, MS-026, TQFP-100 |
| 文件頁數(shù)： | 20/22頁 |
| 文件大小： | 635K |
| 代理商： | CY7C028V-20ACT |
CY7C027V/027AV/028V
CY7C037AV/038V
Document #: 38-06078 Rev. *D
Page 7 of 22
Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. User guidelines are not tested.
Storage temperature ................................ –65
C to +150 C
Ambient temperature with
power applied ........................................... –55
C to +125 C
Supply voltage to ground potential ...............–0.5 V to +4.6 V
DC voltage applied to
outputs in High-Z state........................... –0.5 V to VCC+0.5 V
Output current into outputs (LOW) .............................. 20 mA
Static discharge voltage.......................................... > 1100 V
Latch-up current .................................................... > 200 mA
Operating Range
Range
Ambient
Temperature
VCC
Commercial
0
C to +70 C
3.3 V
300 mV
Industrial[9]
–40
C to +85 C
3.3 V
300 mV
Electrical Characteristics Over the Operating Range
Parameter
Description
CY7C027V/027AV/028V/CY7C037AV/CY7C038V
Unit
-15
-20
-25
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
VOH
Output HIGH voltage
(VCC=Min., IOH= –4.0 mA)
2.4
–
2.4
–
2.4
–
V
VOL
Output LOW voltage (VCC=Min., IOH= +4.0 mA)
–
0.4
–
0.4
–
0.4
V
VIH
Input HIGH voltage
2.2
–
2.2
–
2.2
–
V
VIL
Input LOW voltage
–
0.8
–
0.8
–
0.8
V
IIX
Input leakage current
55
A
IOZ
Output leakage current
–10
10
–10
10
–10
10
A
ICC
Operating current (VCC=Max. IOUT=0
mA) outputs disabled
Com’l.
125
185
–
120
175
–
115
165
mA
Ind.[9]
–
140
195
–
mA
ISB1
Standby current (Both ports TTL
level) CEL & CER VIH, f=fMAX
Com’l.
35
50
35
45
30
40
mA
Ind.[9]
–45
55
–
mA
ISB2
Standby current (One port TTL level)
CEL | CER VIH, f=fMAX
Com’l.
80
120
75
110
65
95
mA
Ind.[9]
–85
120
–
mA
ISB3
Standby current (Both ports CMOS
level) CEL & CER VCC0.2 V, f=0
Com’l.
10
250
10
250
10
250
A
Ind.[9]
–10
250
–
A
ISB4
Standby current (One port CMOS
Com’l.
75
105
70
95
60
80
mA
Ind.[9]
–80
105
–
mA
Capacitance[11]
Parameter
Description
Test Conditions
Max
Unit
CIN
Input capacitance
TA = 25 C, f = 1 MHz,
VCC = 3.3 V
10
pF
COUT
Output capacitance
10
pF
Notes
8. Pulse width < 20 ns.
9. Industrial parts are available in CY7C028V and CY7C038V, CY7C027V/027AV only.
10. fMAX = 1/tRC = All inputs cycling at f = 1/tRC (except output enable). f = 0 means no address or control lines change. This applies only to inputs at CMOS level standby ISB3.
11. Tested initially and after any design or process changes that may affect these parameters.
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