參數(shù)資料
型號： CY62168DV30
廠商： Cypress Semiconductor Corp.
英文描述： 16-Mbit (2048K x 8) Static RAM
中文描述： 16兆位（2048K × 8）靜態(tài)RAM
文件頁數(shù)： 3/9頁
文件大小： 231K
代理商： CY62168DV30
CY62168DV30
MoBL
Document #: 38-05329 Rev. *D
Page 3 of 9
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ..................................–65°C to +150°C
Ambient Temperature with
Power Applied.............................................–55°C to +125°C
Supply Voltage to Ground
Potential........................................ –0.3V to V
CC(max)
+ 0.3V
DC Voltage Applied to Outputs
in High-Z State
[4, 5]
......................... –0.3V to V
CC(max)
+ 0.3V
DC Electrical Characteristics
(Over the Operating Range)
DC Input Voltage
[4, 5]
......................–0.3V to V
CC(max)
+ 0.3V
Output Current into Outputs (LOW).............................20 mA
Static Discharge Voltage...........................................> 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current.....................................................> 200 mA
Operating Range
Range
Industrial
Ambient
Temperature (T
A
)
[6]
–40°C to +85°C
V
CC
[7]
2.2V – 3.6V
Parameter
Description
Test Conditions
2.2 < V
CC
< 2.7
2.7 < V
CC
< 3.6
2.2 < V
CC
< 2.7
2.7 < V
CC
< 3.6
2.2 < V
CC
< 2.7
CY62168DV30-55
Min.
Typ.
[3]
2.0
2.4
CY62168DV30-70
Min.
Typ.
[3]
2.0
2.4
Unit
V
Max.
Max.
V
OH
Output HIGH Voltage
I
OH
=
0.1 mA
I
OH
=
1.0 mA
I
OL
= 0.1 mA
I
OH
= 2.1 mA
V
OL
Output LOW Voltage
0.4
0.4
V
CC
+
0.3
V
CC
+
0.3
0.6
0.8
+1
+1
30
4
0.4
0.4
V
CC
+
0.3
V
CC
+
0.3
0.6
0.8
+1
+1
25
4
V
V
IH
Input HIGH Voltage
1.8
1.8
V
2.7 < V
CC
< 3.6
2.2
2.2
V
IL
Input LOW Voltage
2.2 < V
CC
< 2.7
2.7 < V
CC
< 3.6
GND < V
I
< V
CC
–0.3
–0.3
–1
–1
–0.3
–0.3
–1
–1
V
I
IX
I
OZ
Input Leakage Current
Output Leakage Current GND < V
O
< V
CC
, Output disabled
V
CC
Operating Supply
Current
f = 1 MHz
μ
A
μ
A
mA
I
CC
f = f
MAX
= 1/t
RC
Vcc = 3.6V,
I
OUT
= 0mA,
CMOS level
15
2
12
2
I
SB1
Automatic CE
Power-down Current
CMOS Inputs
CE
1
> V
CC
0.2V, CE
2
<
0.2V, V
IN
> V
CC
0.2V, V
IN
< 0.2V, f = f
MAX
(Address
and Data Only), f = 0 (OE,
WE, )
CE
1
> V
CC
0.2V, CE
2
<
0.2V, V
IN
> V
CC
0.2V or
V
IN
< 0.2V, f = 0, V
CC
=3.6V
L
2.5
30
2.5
30
μ
A
LL
2.5
22
2.5
22
I
SB2
Automatic CE
Power-down Current
CMOS Inputs
L
LL
2.5
2.5
30
22
2.5
2.5
30
22
μ
A
Thermal Resistance
Parameter
Θ
JA
Description
Test Conditions
BGA
55
Unit
°
C/W
Thermal Resistance
[8]
(Junction to Ambient)
Thermal Resistance
[8]
(Junction to Case)
Still Air, soldered on a 3 x 4.5 inch, four-layer printed
circuit board
Θ
JC
16
°
C/W
Notes:
4.V
IL(min)
= –0.2V for pulse durations less than 20 ns.
5.V
IH(max)
= V
CC
+ 0.75V for pulse durations less than 20 ns.
6.T
7.Full device AC operation assumes a 100
μ
s ramp time from 0 to V
cc
(min) and 100
μ
s wait time after V
cc
stabilization..
8. Tested initially and after any design or process changes that may affect these parameters.
相關(guān)PDF資料
PDF描述
CY62168DV30L-55BVXI 16-Mbit (2048K x 8) Static RAM
CY62168DV30L-70BVXI 16-Mbit (2048K x 8) Static RAM
CY62168DV30LL-70BVXI 16-Mbit (2048K x 8) Static RAM
CY62177DV30LL-55BAI Replacement for National Semiconductor part number 9328DM. Buy from authorized manufacturer Rochester Electronics.
CY62168EV30 16-Mbit (2M x 8) Static RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY62168DV30L-70BVI 制造商:Cypress Semiconductor 功能描述:SRAM Chip Async Single 2.5V/3.3V 16M-Bit 2M x 8 70ns 48-Pin VFBGA 制造商:Rochester Electronics LLC 功能描述:16M (2M X 8)- 3.0V SLOW ASYNCH SRAM - Bulk
CY62168DV30LL-55BVI 功能描述:靜態(tài)隨機(jī)存取存儲器 SLO 3.0V SUPER LO PWR 2MEGX8 靜態(tài)隨機(jī)存取存儲器 IND RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY62168DV30LL-55BVIT 功能描述:靜態(tài)隨機(jī)存取存儲器 SLO 3.0V SUPER LO PWR 2MEGX8 靜態(tài)隨機(jī)存取存儲器 IND RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY62168DV30LL-55BVXI 功能描述:IC SRAM 16MBIT 55NS 48VFBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:MoBL® 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2
CY62168DV30LL-55BVXIT 功能描述:IC SRAM 16MBIT 55NS 48VFBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:MoBL® 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*