參數(shù)資料
型號： CY62167EV18
廠商： Cypress Semiconductor Corp.
英文描述： Replacement for National Semiconductor part number 9334DM. Buy from authorized manufacturer Rochester Electronics.
中文描述： 16兆位（1米× 16）靜態(tài)RAM
文件頁數(shù)： 4/12頁
文件大?。?/td> 459K
代理商： CY62167EV18
CY62167EV18 MoBL
Document #: 38-05447 Rev. *E
Page 4 of 12
Thermal Resistance
Tested initially and after any design or process changes that may affect these parameters.
Parameter
Description
Test Conditions
VFBGA
(6 x 7 x 1mm)
27.74
VFBGA
(6 x 8 x 1mm)
55
Unit
Θ
JA
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
Still air, soldered on a 3 × 4.5 inch,
two-layer printed circuit board
°
C/W
Θ
JC
9.84
16
°
C/W
AC Test Loads and Waveforms
Parameters
R1
R2
R
TH
V
TH
1.8V
13500
10800
6000
0.80
Unit
V
Data Retention Characteristics
Over the Operating Range
Parameter
V
DR
I
CCDR[8]
Description
Conditions
Min
1.0
Typ
[4]
Max
Unit
V
μ
A
V
CC
for Data Retention
Data Retention Current
V
CC
= 1.0V, CE
1
> V
CC
– 0.2V, CE
2
< 0.2V,
V
IN
> V
CC
– 0.2V or V
IN
< 0.2V
10
t
CDR[9]
Chip Deselect to Data
Retention Time
Operation Recovery Time
0
ns
t
R[10]
t
RC
ns
Data Retention Waveform
V
CC
V
CC
OUTPUT
R2
30 pF
INCLUDING
JIG AND
SCOPE
GND
90%
10%
90%
10%
Rise Time = 1 V/ns
Fall Time = 1 V/ns
OUTPUT
V
Equivalent to: THéVENIN EQUIVALENT
ALL INPUT PULSES
R
TH
R1
Notes
9. Tested initially and after any design or process changes that may affect these parameters.
10.Full device operation requires linear V
ramp from V
to V
(min) > 100
μ
s or stable at V
(min) > 100
μ
s.
11. BHE.BLE is the AND of both BHE and BLE. Deselect the chip by either disabling the chip enable signals or by disabling both BHE and BLE.
V
CC
(min)
t
R
V
CC
(min)
t
CDR
V
DR
> 1.0 V
DATA RETENTION MODE
CE
1
or
V
CC
BHE
.
BLE
CE
2
or
[11]
相關(guān)PDF資料
PDF描述
CY62167EV18LL-55BAXI Replacement for National Semiconductor part number 9334DMQB. Buy from authorized manufacturer Rochester Electronics.
CY62167EV18LL-55BVXI Replacement for National Semiconductor part number 9334FM. Buy from authorized manufacturer Rochester Electronics.
CY62167E Replacement for National Semiconductor part number 9328FMQB. Buy from authorized manufacturer Rochester Electronics.
CY62167ELL-45ZXI Replacement for National Semiconductor part number 9328PCQR. Buy from authorized manufacturer Rochester Electronics.
CY62168DV3_06 16-Mbit (2M x 8) MoBL㈢ Static RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY62167EV18LL-558VXI 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述:
CY62167EV18LL-55BAXI 功能描述:靜態(tài)隨機存取存儲器 16Mbit 靜態(tài)隨機存取存儲器 55ns 1.8V CMOS RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY62167EV18LL-55BVI 功能描述:靜態(tài)隨機存取存儲器 16MB (1Mx16) 1.8v 55ns Async 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY62167EV18LL-55BVIT 功能描述:靜態(tài)隨機存取存儲器 16 Mbit Static RAM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY62167EV18LL55BVXI 制造商:Cypress Semiconductor 功能描述:
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*