- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄380168 > CY62157E (Cypress Semiconductor Corp.) 8-Mbit (512K x 16) Static RAM PDF資料下載
參數(shù)資料
| 型號： | CY62157E |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | 8-Mbit (512K x 16) Static RAM |
| 中文描述： | 8兆位（為512k × 16）靜態(tài)RAM |
| 文件頁數(shù)： | 5/12頁 |
| 文件大小： | 530K |
| 代理商： | CY62157E |
CY62157E MoBL
Document #: 38-05695 Rev. *E
Page 5 of 12
Switching Characteristics
Over the Operating Range
[12, 13]
Parameter
Description
45 ns (Industrial)
55 ns (Automotive)
Unit
Min
Max
Min
Max
Read Cycle
t
RC
t
AA
t
OHA
t
ACE
t
DOE
t
LZOE
t
HZOE
t
LZCE
t
HZCE
t
PU
t
PD
t
DBE
t
LZBE
t
HZBE
Write Cycle
[16]
Read Cycle Time
45
55
ns
Address to Data Valid
45
55
ns
Data Hold from Address Change
10
10
ns
CE
1
LOW and CE
2
HIGH to Data Valid
OE LOW to Data Valid
OE LOW to LOW-Z
[14]
OE HIGH to High-Z
[14, 15]
CE
1
LOW and CE
2
HIGH to Low-Z
[14]
CE
1
HIGH and CE
2
LOW to High-Z
[14, 15]
CE
1
LOW and CE
2
HIGH to Power Up
CE
1
HIGH and CE
2
LOW to Power Down
BLE/BHE LOW to Data Valid
BLE/BHE LOW to Low-Z
[14]
BLE/BHE HIGH to HIGH-Z
[14, 15]
45
55
ns
22
25
ns
5
5
ns
18
20
ns
10
10
ns
18
20
ns
0
0
ns
45
55
ns
45
55
ns
10
10
ns
18
20
ns
t
WC
t
SCE
t
AW
t
HA
t
SA
t
PWE
t
BW
t
SD
t
HD
t
HZWE
t
LZWE
Write Cycle Time
45
55
ns
CE
1
LOW and CE
2
HIGH
to Write End
Address Setup to Write End
35
35
40
40
ns
ns
Address Hold from Write End
0
0
0
0
ns
Address Setup to Write Start
ns
WE Pulse Width
35
40
ns
BLE/BHE LOW to Write End
35
25
40
25
ns
Data Setup to Write End
ns
Data Hold from Write End
WE LOW to High-Z
[14, 15]
WE HIGH to Low-Z
[14]
0
0
ns
18
20
ns
10
10
ns
Notes
12.Test conditions for all parameters other than tri-state parameters assume signal transition time of 3 ns or less, timing reference levels of V
CC(typ)
/2, input pulse
levels of 0 to V
, and output loading of the specified I
/I
as shown in the
“AC Test Loads and Waveforms” on page 4
.
13.AC timing parameters are subject to byte enable signals (BHE or BLE) not switching when chip is disabled. See
application note AN13842
for further clarification.
14.At any temperature and voltage condition, t
is less than t
, t
is less than t
, t
is less than t
LZOE
, and t
HZWE
is less than t
LZWE
for any device.
15.t
, t
, t
, and t
transitions are measured when the outputs enter a high impedance state.
16.The internal write time of the memory is defined by the overlap of WE, CE
= V
, BHE, BLE, or both = V
, and CE
= V
. All signals must be active to initiate a
write and any of these signals can terminate a write by going inactive. The data input setup and hold timing must be referenced to the edge of the signal that
terminates the write.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY62157ELL-45ZSXI | 8-Mbit (512K x 16) Static RAM |
| CY62157ELL-55BVXE | 8-Mbit (512K x 16) Static RAM |
| CY62157ELL-55ZSXE | 8-Mbit (512K x 16) Static RAM |
| CY62158CV25 | 1024K x 8 MoBL Static RAM |
| CY62158CV25LL-70BAI | 1024K x 8 MoBL Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY62157ELL-45ZSXI | 功能描述:靜態(tài)隨機(jī)存取存儲器 8M ULTRA LO PWR HI SPD 靜態(tài)隨機(jī)存取存儲器 IND RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY62157ELL-45ZSXIT | 功能描述:靜態(tài)隨機(jī)存取存儲器 8M ULTRA LO PWR HI SPD 靜態(tài)隨機(jī)存取存儲器 IND RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY62157ELL-55BVXE | 功能描述:靜態(tài)隨機(jī)存取存儲器 8M MOBL ULTRA Lo PWR HI SPD ASYNC 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY62157ELL-55BVXET | 功能描述:靜態(tài)隨機(jī)存取存儲器 8M MOBL ULTRA Lo PWR HI SPD ASYNC 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY62157ELL-55ZSXE | 功能描述:靜態(tài)隨機(jī)存取存儲器 8M MOBL ULTRA Lo PWR HI SPD ASYNC 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。