參數(shù)資料
型號(hào)： CY62148EV30LL
廠商： Cypress Semiconductor Corp.
英文描述： 4-Mbit (512K x 8) Static RAM
中文描述： 4兆位（為512k × 8）靜態(tài)RAM
文件頁數(shù)： 11/12頁
文件大?。?/td> 919K
代理商： CY62148EV30LL
CY62148EV30 MoBL
Document #: 38-05576 Rev. *F
Page 11 of 12
Document History Page
Document Title: CY62148EV30 MoBL
, 4-Mbit (512K x 8) Static RAM
Document Number: 38-05576
REV.
ECN NO.
Issue
Date
Change
**
223225
See ECN
AJU
*A
247373
See ECN
SYT
Orig. of
Description of Change
New data sheet
Changed from Advance Information to Preliminary
Moved Product Portfolio to Page 2
Changed V
CC
stabilization time in footnote #7 from 100
μ
s to 200
μ
s
Changed I
CCDR
from 2.0
μ
A to 2.5
μ
A
Changed typo in Data Retention Characteristics (t
R
) from 100
μ
s to t
RC
ns
Changed t
OHA
from 6 ns to 10 ns for both 35 ns and 45 ns Speed Bin
Changed t
HZOE
, t
HZWE
from 12 to 15 ns for 35 ns Speed Bin and 15 to 18 ns for 45
ns Speed Bin
Changed t
SCE
from 25 to 30 ns for 35 ns Speed Bin and 40 to 35 ns for 45 ns Speed Bin
Changed t
HZCE
from 12 to 18 ns for 35 ns Speed Bin and 15 to 22 ns for 45 ns Speed
Bin
Changed t
SD
from 15 to 18 ns for 35 ns Speed Bin and 20 to 22 ns for
45 ns Speed Bin
Changed t
DOE
from 15 to 18 ns for 35 ns Speed Bin
Changed Ordering Information to include Pb-Free Packages
Changed from Preliminary information to Final
Changed the address of Cypress Semiconductor Corporation on Page #1 from “3901
North First Street” to “198 Champion Court”
Removed 35ns Speed Bin
Removed “L” version of CY62148EV30
Changed ball C3 from DNU to NC.
Removed the redundant footnote on DNU.
Changed I
CC
(max) value from 2 mA to 2.5 mA and I
CC
(Typ) value from
1.5 mA to 2 mA at f=1 MHz
Changed I
CC
(Typ) value from 12 mA to 15 mA at f = f
max
Changed I
SB1
and I
SB2
Typ values from 0.7
μ
A to 1
μ
A and Max values from 2.5
μ
A
to 7
μ
A.
Changed the AC test load capacitance value from 50pF to 30pF.
Changed I
CCDR
from 2.5
μ
A to 7
μ
A.
Added I
CCDR
typical value.
Changed t
LZOE
from 3 ns to 5 ns
Changed t
LZCE
and t
LZWE
from 6 ns to 10 ns
Changed t
HZCE
from 22 ns to 18 ns
Changed t
PWE
from 30 ns to 35 ns.
Changed t
SD
from 22 ns to 25 ns.
Updated the package diagram 36-pin VFBGA from *B to *C
Added 32-pin SOIC package diagram and pin diagram
Updated the ordering information table and replaced the Package Name column with
Package Diagram.
Included Automotive Range in product offering
Updated Thermal Resistance table
Updated the Ordering Information
Added footnote #8
Added V
IL
spec for SOIC package
Removed Automotive part and its related information
Added footnote #2 related to SOIC package
Added footnote #9 related to I
SB2
Added AC values for 55 ns Industrial-SOIC range
Updated Ordering Information table
*B
414807
See ECN
ZSD
*C
464503
See ECN
NXR
*D
833080
See ECN
VKN
*E
890962
See ECN
VKN
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相關(guān)PDF資料
PDF描述
CY62148EV30LL-45BVXI 4-Mbit (512K x 8) Static RAM
CY62148EV30LL-45ZSXI 4-Mbit (512K x 8) Static RAM
CY62148EV30LL-55SXI 4-Mbit (512K x 8) Static RAM
CY62148E 4-Mbit (512K x 8) Static RAM
CY62148ELL 4-Mbit (512K x 8) Static RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY62148EV30LL-45BVI 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 4M MoBL Ultra Lo PWR HI SPD MicroPWR RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY62148EV30LL-45BVIT 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 4M MoBL Ultra Lo PWR HI SPD MicroPWR RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY62148EV30LL-45BVXI 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 4M MoBL Ultra LO Pwr HI SPD Micropwr IND RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY62148EV30LL-45BVXIT 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 4M MoBL Ultra LO Pwr HI SPD Micropwr IND RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY62148EV30LL-45SXI 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 4M MoBL Ultra LO Pwr HI SPD Micropwr IND RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
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