參數(shù)資料
型號(hào): CY62147V
廠商: Cypress Semiconductor Corp.
英文描述: 4M (256K x 16) Static RAM
中文描述: 4分(256K × 16)靜態(tài)RAM
文件頁數(shù): 3/9頁
文件大小: 170K
代理商: CY62147V
CY62147V MoBL
Document #: 38-05050 Rev. *A
Page 3 of 9
AC Test Loads and Waveforms
I
SB1
Automatic CE
Power-down Current
CMOS Inputs
Automatic CE
Power-down Current
CMOS Inputs
CE > V
CC
0.3V, V
IN
> V
CC
0.3V or V
IN
< 0.3V, f = f
MAX
2
20
μ
A
I
SB2
CE > V
CC
0.3V, V
IN
> V
CC
0.3V, or V
IN
< 0.3V, f = 0
V
CC
= 3.6V
Capacitance
[4]
Parameter
Description
Test Conditions
T
A
= 25
°
C, f = 1 MHz,
V
CC
= V
CC(typ.)
Max.
6
8
Unit
pF
pF
C
IN
C
OUT
Input Capacitance
Output Capacitance
Thermal Resistance
Parameter
Θ
JA
Description
Test Conditions
BGA
55
TSOPII
60
Units
°
C/W
Thermal Resistance
(Junction to Ambient)
[4]
Thermal Resistance
(Junction to Case)
[4]
Still Air, soldered on a 4.25 x 1.125 inch, 4-layer
printed circuit board
Θ
JC
16
22
°
C/W
Electrical Characteristics
Over the Operating Range (continued)
Parameter
Description
Test Conditions
CY62147V-70
Min.
Typ.
[3]
Unit
Max.
Parameter
R1
R2
R
TH
V
TH
3.0V
1105
1550
645
1.75
Unit
V
Data Retention Characteristics
(Over the Operating Range)
Parameter
V
DR
I
CCDR
Description
Conditions
Min.
1.0
Typ.
[3]
Max.
3.6
10
Unit
V
μ
A
V
CC
for Data Retention
Data Retention Current
V
CC
= 1.0V, CE > V
CC
0.3V, V
IN
> V
CC
0.3V or V
IN
<
0.3V; No input may exceed V
CC
+ 0.3V
1
t
CDR[4]
Chip Deselect to Data
Retention Time
Operation Recovery Time
0
ns
t
R[5]
Note:
4.
70
ns
Tested initially and after any design or process changes that may affect these parameters.
V
CC
Typ
V
CC
OUTPUT
R2
30 pF
INCLUDING
JIG AND
SCOPE
GND
90%
10%
90%
10%
OUTPUT
V
TH
Equivalent to:
TH
é
VENIN EQUIVALENT
R
TH
ALL INPUT PULSES
R1
V
CC
OUTPUT
5 pF
INCLUDING
JIG AND
SCOPE
(b)
R1
R2
(a)
Rise TIme: 1 V/ns
Fall Time: 1 V/ns
(c)
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