參數(shù)資料
型號： CY62147DV30_06
廠商： Cypress Semiconductor Corp.
英文描述： 4-Mbit (256K x 16) Static RAM
中文描述： 4兆位（256K × 16）靜態(tài)RAM
文件頁數(shù)： 3/12頁
文件大小： 359K
代理商： CY62147DV30_06
CY62147DV30
Document #: 38-05340 Rev. *F
Page 3 of 12
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................–65°C to +150°C
Ambient Temperature with
Power Applied.............................................–55°C to +125°C
Supply Voltage to Ground
Potential......................................–0.3V to + V
CC(MAX)
+ 0.3V
DC Voltage Applied to Outputs
in High-Z State
[6,7]
..........................–0.3V to V
CC(MAX)
+ 0.3V
DC Input Voltage
[6,7]
..................... –0.3V to V
CC(MAX)
+ 0.3V
Output Current into Outputs (LOW).............................20 mA
Static Discharge Voltage........................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-up Current......................................................>200 mA
Operating Range
Device
Range
Automotive-E –40°C to +125°C
Industrial
–40°C to +85°C
Automotive-A –40°C to +85°C
Ambient
Temperature
[T
A
]
[9]
V
CC
2.20V
to
3.60V
CY62147DV30L
CY62147DV30LL
Electrical Characteristics
(Over the Operating Range)
Parameter Description
V
OH
Output HIGH
Voltage
Test Conditions
–45
–55/–70
Typ.
[5]
Unit
V
V
V
V
V
V
V
V
μ
A
Min.
2.0
2.4
Typ.
[5]
Max.
Min.
2.0
2.4
Max.
I
OH
= –0.1 mA
I
OH
= –1.0 mA
I
OL
= 0.1 mA
I
OL
= 2.1 mA
V
CC
= 2.2V to 2.7V
V
CC
= 2.7V to 3.6V
V
CC
= 2.2V to 2.7V
V
CC
= 2.7V to 3.6V
GND < V
I
< V
CC
V
CC
= 2.20V
V
CC
= 2.70V
V
CC
= 2.20V
V
CC
= 2.70V
V
OL
Output LOW
Voltage
0.4
0.4
0.4
0.4
V
IH
Input HIGH
Voltage
1.8
2.2
–0.3
–0.3
–1
V
CC
+ 0.3V
V
CC
+ 0.3V
0.6
0.8
+1
1.8
2.2
–0.3
–0.3
–1
V
CC
+ 0.3V
V
CC
+ 0.3V
0.6
0.8
+1
V
IL
Input LOW
Voltage
I
IX
Input Leakage
Current
Ind’l
Auto-A
[9]
Auto-E
[9]
–1
–4
–1
+1
+4
+1
μ
A
μ
A
μ
A
I
OZ
Output
Leakage
Current
GND < V
O
< V
CC
,
Output Disabled
Ind’l
Auto-A
[9]
Auto-E
[9]
V
CC
= V
CCmax
I
OUT
= 0 mA
CMOS levels
Ind’l
Auto-A
[9]
LL
Auto-E
[9]
L
–1
+1
–1
–4
+1
+4
15
3
μ
A
μ
A
mA
mA
I
CC
V
CC
Operating
Supply
Current
Automatic CE
Power-Down
Current —
CMOS Inputs
f = f
MAX
= 1/t
RC
f = 1 MHz
10
1.5
20
3
8
1.5
I
SB1
CE > V
CC
0.2V,
V
IN
>V
CC
–0.2V, V
IN
<0.2V)
f = f
MAX
(Address and
Data Only),
f = 0 (OE, WE, BHE and
BLE), V
CC
= 3.60V
CE > V
CC
– 0.2V,
V
IN
> V
CC
– 0.2V or
V
IN
< 0.2V,
f = 0, V
CC
= 3.60V
LL
8
8
8
25
μ
A
I
SB2
Automatic CE
Power-Down
Current —
CMOS Inputs
Ind’l
Auto-A
[9]
LL
Auto-E
[9]
L
LL
8
8
8
25
μ
A
Notes:
6. V
IL(min.)
= –2.0V for pulse durations less than 20 ns.
7. V
= V
+ 0.75V for pulse durations less than 20 ns.
8. Full device AC operation assumes a 100-
μ
s ramp time from 0 to V
CC
(min) and 200-
μ
s wait time after V
CC
stabilization.
9. Auto-A is available in –70 and Auto-E is available in –55.
[+] Feedback
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY62147DV30L 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:4-Mbit (256K x 16) Static RAM
CY62147DV30L-55BVI 制造商:Rochester Electronics LLC 功能描述:4MB (256K X 16) 3.0V LOW POWER SLOW SRAM - Bulk 制造商:Cypress Semiconductor 功能描述:
CY62147DV30L-55BVIT 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述:
CY62147DV30L-55BVXE 功能描述:靜態(tài)隨機存取存儲器 SLO 3.0V SUPER LO PWR 256KX16 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY62147DV30L-55BVXET 功能描述:靜態(tài)隨機存取存儲器 SLO 3.0V SUPER LO PWR 256KX16 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
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