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參數(shù)資料
| 型號： | CY62138CV30LL-55BAI |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 2M (256K x 8) Static RAM |
| 中文描述： | 256K X 8 STANDARD SRAM, 55 ns, PBGA36 |
| 封裝： | 7 X 7 MM, 1.20 MM HEIGHT, FBGA-36 |
| 文件頁數(shù)： | 4/12頁 |
| 文件大小： | 234K |
| 代理商： | CY62138CV30LL-55BAI |
CY62138CV25/30/33 MoBL
CY62138CV MoBL
Document #: 38-05200 Rev. *D
Page 4 of 12
Electrical Characteristics
Over the Operating Range
Thermal Resistance
Parameter
V
OH
Description
Output HIGH Voltage
Test Conditions
CY62138CV33-55
Min.
Typ.
[5]
2.4
CY62138CV33-70
CY62138CV-70
Min.
Typ.
[5]
2.4
2.4
Unit
V
V
V
V
V
Max.
Max.
I
OH
=
–
1.0 mA
V
CC
= 3.0V
V
CC
= 2.7V
V
CC
= 3.0V
V
CC
= 2.7V
V
OL
Output LOW Voltage
I
OL
= 2.1 mA
0.4
0.4
0.4
V
CC
+
0.3V
0.8
+1
+1
V
IH
Input HIGH Voltage
2.2
V
CC
+
0.3V
0.8
+1
+1
2.2
V
IL
I
IX
I
OZ
Input LOW Voltage
Input Leakage Current GND < V
I
< V
CC
Output Leakage
Current
V
CC
Operating Supply
Current
–
0.3
–
1
–
1
–
0.3
–
1
–
1
V
μ
A
μ
A
GND < V
O
< V
CC
, Output Disabled
I
CC
f = f
MAX
= 1/t
RC
f = 1 MHz
V
CC
= 3.6V
I
OUT
= 0 mA
CMOS Levels
7
15
3
5.5
1.5
12
3
mA
1.5
I
SB1
Automatic CE
Power-down Current
—
CMOS Inputs
CE
1
> V
CC
–
0.2V or CE
2
< 0.2V
V
IN
> V
CC
–
0.2V or V
IN
< 0.2V,
f = f
max
(Address and Data Only),
f = 0 (OE,WE)
CE
1
> V
CC
–
0.2V or CE
2
< 0.2V
V
IN
> V
CC
0.2V or V
IN
< 0.2V,
f = 0, V
CC
= 3.6V
5
15
5
15
μ
A
I
SB2
Automatic CE
Power-down Current
—
CMOS Inputs
Capacitance
[6]
Parameter
Description
Test Conditions
Max.
6
8
Unit
pF
pF
C
IN
C
OUT
Input Capacitance
Output Capacitance
T
A
= 25
°
C, f = 1 MHz, V
CC
= V
CC(typ.)
Parameter
Θ
JA
Description
Test Conditions
BGA
55
Unit
°
C/W
Thermal Resistance
[6]
(Junction to Ambient)
Thermal Resistance
[6]
(Junction to Case)
Still Air, soldered on a 3 x 4.5 inch, two-layer printed
circuit board
Θ
JC
16
°
C/W
AC Test Loads and Waveforms
Note:
6.
Tested initially and after any design or process changes that may affect these parameters.
V
CC
Typ
V
CC
OUTPUT
R2
30 pF
INCLUDING
JIG AND
SCOPE
GND
90%
10%
90%
10%
OUTPUT
V
TH
Equivalent to:
TH
é
VENIN EQUIVALENT
R
TH
ALL INPUT PULSES
R1
Fall time: 1 V/ns
Rise Time: 1 V/ns
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| CY62138CV30LL-70BAI | 2M (256K x 8) Static RAM |
| CY62138CV30LL-70BVI | 2M (256K x 8) Static RAM |
| CY62138CV33 | 2M (256K x 8) Static RAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY62138CV30LL-55BVI | 制造商:Cypress Semiconductor 功能描述: 制造商:Rochester Electronics LLC 功能描述: |
| CY62138CV30LL-55BVIT | 制造商:Cypress Semiconductor 功能描述: 制造商:Rochester Electronics LLC 功能描述: |
| CY62138CV30LL-55BVXI | 制造商:Cypress Semiconductor 功能描述:SRAM ASYNC SGL 3V 2MBIT 256KX8 55NS 36BGA - Bulk |
| CY62138CV30LL-55BVXIT | 制造商:Cypress Semiconductor 功能描述:SRAM ASYNC SGL 3V 2MBIT 256KX8 55NS 36FBGA - Tape and Reel |
| CY62138CV30LL-70BAI | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:2M (256K x 8) Static RAM |
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