參數(shù)資料
型號(hào): CY62138CV30LL-55BAI
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 2M (256K x 8) Static RAM
中文描述: 256K X 8 STANDARD SRAM, 55 ns, PBGA36
封裝: 7 X 7 MM, 1.20 MM HEIGHT, FBGA-36
文件頁數(shù): 12/12頁
文件大?。?/td> 234K
代理商: CY62138CV30LL-55BAI
CY62138CV25/30/33 MoBL
CY62138CV MoBL
Document #: 38-05200 Rev. *D
Page 12 of 12
Document History Page
Document Title: CY62138CV25/30/33 MoBL
/CY62138CV MoBL
2M (256K x 8) Static RAM
Document Number: 38-05200
REV.
ECN NO.
Issue Date
Orig. of
Change
**
112381
02/19/02
GAV
*A
114024
04/25/02
JUI
Description of Change
New Data Sheet (advance information)
Added BV package diagram
Changed from Advance Information to Preliminary
Added Second Chip Enable
Changed from Preliminary to Final
Added new part number: CY62138CV with wider voltage (2.7V
3.6V)
For T
AA
= 55 ns, improved t
PWE
min. from 45 ns to 40 ns
For T
AA
= 70 ns, improved t
PWE
min. from 60 ns to 45 ns
For T
AA
= 70 ns, improved t
LZWE
min. from 5 ns to 10 ns
Improved Typ. I
CC
spec. to 7 mA (for 55 ns) and 5.5 mA (for 70 ns).
Improved Max I
CC
spec. to 15 mA (for 55 ns) and 12 mA (for 70 ns).
For T
AA
= 55 ns, improved t
LZWE
min. from 5 ns to 10 ns.
Changed upper spec. for Supply Voltage to Ground Potential to V
CCMAX
+
0.5V.
Changed upper spec for DC Voltage Applied to Ouputs in High-Z State and
DC Input Voltage to V
CC
+ 0.3V.
*B
117062
07/12/02
MGN
*C
118123
09/09/02
MGN
*D
118760
09/23/02
MGN
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY62138CV30LL-55BVI 制造商:Cypress Semiconductor 功能描述: 制造商:Rochester Electronics LLC 功能描述:
CY62138CV30LL-55BVIT 制造商:Cypress Semiconductor 功能描述: 制造商:Rochester Electronics LLC 功能描述:
CY62138CV30LL-55BVXI 制造商:Cypress Semiconductor 功能描述:SRAM ASYNC SGL 3V 2MBIT 256KX8 55NS 36BGA - Bulk
CY62138CV30LL-55BVXIT 制造商:Cypress Semiconductor 功能描述:SRAM ASYNC SGL 3V 2MBIT 256KX8 55NS 36FBGA - Tape and Reel
CY62138CV30LL-70BAI 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:2M (256K x 8) Static RAM