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參數(shù)資料
| 型號： | CY62136FV30LL |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | 2-Mbit (128K x 16) Static RAM |
| 中文描述： | 2兆位（128K的× 16）靜態(tài)RAM |
| 文件頁數(shù)： | 12/12頁 |
| 文件大?。?/td> | 428K |
| 代理商： | CY62136FV30LL |
CY62136FV30 MoBL
Cypress Semiconductor Corporation, 2006-2007. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use
of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used
for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use
as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support
systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign),
United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of,
and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress
integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited without
the express written permission of Cypress.
Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES
OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not
assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where
a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer
assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Use may be limited by and subject to the applicable Cypress software license agreement.
Document Number: 001-08402 Rev. *D
MoBL is a registered trademark and More Battery Life is a trademark of Cypress Semiconductor. All product and company names mentioned in this document are the trademarks of their respective holders
.
Revised August 03, 2007
Page 12 of 12
Document History Page
Document Title: CY62136FV30 MoBL
2-Mbit (128K x 16) Static RAM
Document Number: 001-08402
Issue
Date
Change
**
See ECN
NXR
*A
797956
See ECN
VKN
REV.
ECN NO.
Orig. of
Description of Change
New datasheet
Converted from preliminary to final
Changed I
SB1(typ)
and
I
SB1(max)
specification from 0.5
μ
A to 1.0
μ
A and
2.5
μ
A to 5.0
μ
A, respectively
Changed I
SB2(typ)
and
I
SB2(max)
specification from 0.5
μ
A to 1.0
μ
A and
2.5
μ
A to 5.0
μ
A, respectively
Changed I
CCDR(typ)
and
I
CCDR(max)
specification from 0.5
μ
A to 1.0
μ
A and
2.5
μ
A to 4.0
A, respectively
Changed I
CC(max)
specification from 2.25
μ
A to 2.5
μ
A
Added Automotive information
Updated Ordering information table
Added footnote 12 related to t
ACE
Added footnote 9 related to I
SB2
and
I
CCDR
Made footnote 13 applicable to AC parameters from t
ACE
VKN/AESA Converted Automotive information from preliminary to final
Changed I
IX
min spec from –1
μ
A to –4
μ
A and I
IX
max spec from +1
μ
A to +4
μ
A
Changed I
OZ
min spec from –1
μ
A to –4
μ
A and I
OZ
max spec from +1
μ
A to +4
μ
A
Changed t
DBE
spec from 55 ns to 25 ns for automotive part
*B
869500
See ECN
VKN
*C
901800
See ECN
VKN
*D
1371124
See ECN
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY62136FV30LL-45BVXI | 2-Mbit (128K x 16) Static RAM |
| CY62136FV30LL-45ZSXI | 2-Mbit (128K x 16) Static RAM |
| CY62136FV30LL-55ZSXE | 2-Mbit (128K x 16) Static RAM |
| CY62137FV18 | 2-Mbit (128K x 16) Static RAM(2Mbit (128K x 16)靜態(tài)RAM) |
| CY62137FV30 | 2-Mbit (128K x 16) Static RAM(2Mbit (128K x 16)靜態(tài)RAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY62136FV30LL-45BVXI | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 SLO 3.0V SUPER LO POWER 128Kx16 IND RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY62136FV30LL-45BVXIT | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 SLO 3.0V SUPER LO POWER 128Kx16 IND RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY62136FV30LL-45XAKJ | 制造商:Cypress Semiconductor 功能描述: |
| CY62136FV30LL-45ZSXA | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 2-Mbit (128K x 16) 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY62136FV30LL-45ZSXAT | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 2-Mbit (128K x 16) 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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