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參數(shù)資料
| 型號： | CY62126DV30LL-55BVI |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 1-Mbit (64K x 16) Static RAM |
| 中文描述： | 64K X 16 STANDARD SRAM, 55 ns, PBGA48 |
| 封裝： | 6 X 8 MM, 1 MM HEIGHT, VFBGA-48 |
| 文件頁數(shù)： | 7/11頁 |
| 文件大?。?/td> | 398K |
| 代理商： | CY62126DV30LL-55BVI |
CY62126DV30
MoBL
Document #: 38-05230 Rev. *E
Page 7 of 11
Write Cycle No. 1 (WE Controlled
[12, 13,
16, 17, 18]
Write Cycle No. 2 (CE Controlled)
[12, 13,
16, 17, 18]
Notes:
17.Data I/O is high-impedance if OE = V
.
18.If CE goes HIGH simultaneously with WE HIGH, the output remains in a high-impedance state.
19.During the DON'T CARE period in the DATA I/O waveform, the I/Os are in output state and input signals should not be applied.
Switching Waveforms
(continued)
t
HD
t
SD
t
PWE
t
SA
t
HA
t
AW
t
WC
DATA I/O
ADDRESS
CE
WE
OE
t
HZOE
DATA
IN
VALID
NOTE19
BHE/BLE
t
BW
t
SCE
t
HD
t
SD
t
PWE
t
HA
t
AW
t
SCE
t
WC
t
HZOE
DATA
IN
VALID
CE
ADDRESS
WE
DATA I/O
OE
NOTE 19
BHE/BLE
t
BW
t
SA
相關PDF資料 |
PDF描述 |
|---|---|
| CY62126DV30L-70ZSI | 1-Mbit (64K x 16) Static RAM |
| CY62126DV30L-55ZSI | 1-Mbit (64K x 16) Static RAM |
| CY62126DV30L-70BVI | 1-Mbit (64K x 16) Static RAM |
| CY62126DV30LL | 1-Mbit (64K x 16) Static RAM |
| CY62126DV30LL-55ZSI | 1-Mbit (64K x 16) Static RAM |
相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY62126DV30LL-55BVXI | 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述: |
| CY62126DV30LL-55ZI | 制造商:Cypress Semiconductor 功能描述: |
| CY62126DV30LL-55ZSI | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:1-Mbit (64K x 16) Static RAM |
| CY62126DV30LL-55ZSXI | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:1-Mbit (64K x 16) Static RAM |
| CY62126DV30LL-55ZXI | 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述: |
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