- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄380163 > CY62126DV30LL-55BVI (CYPRESS SEMICONDUCTOR CORP) 1-Mbit (64K x 16) Static RAM PDF資料下載
參數(shù)資料
| 型號(hào)： | CY62126DV30LL-55BVI |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 1-Mbit (64K x 16) Static RAM |
| 中文描述： | 64K X 16 STANDARD SRAM, 55 ns, PBGA48 |
| 封裝： | 6 X 8 MM, 1 MM HEIGHT, VFBGA-48 |
| 文件頁(yè)數(shù)： | 4/11頁(yè) |
| 文件大小： | 398K |
| 代理商： | CY62126DV30LL-55BVI |
CY62126DV30
MoBL
Document #: 38-05230 Rev. *E
Page 4 of 11
AC Test Loads and Waveforms
[8]
Capacitance
[7]
Parameter
Description
Test Conditions
T
A
= 25°C, f = 1 MHz
V
CC
= V
CC(typ)
Max.
8
8
Unit
pF
pF
C
IN
C
OUT
Input Capacitance
Output Capacitance
Thermal Resistance
Parameter
θ
JA
θ
JC
Description
Test Conditions
TSOP
55
12
FBGA
76
11
Unit
°C/W
°C/W
Thermal Resistance (Junction to Ambient)
[7]
Thermal Resistance (Junction to Case)
[7]
Still Air, soldered on a 3 x 4.5 inch,
two-layer printed circuit board
Data Retention Characteristics
Parameter
Description
Conditions
Min.
Typ
.[4]
Max.
Unit
V
DR
I
CCDR
V
CC
for Data Retention
Data Retention Current
1.5
V
V
CC
=1.5V, CE > V
CC
0.2V,
V
IN
> V
CC
0.2V or V
IN
< 0.2V
L
4
μ
A
LL
3
t
CDR[7]
Chip Deselect to Data
Retention Time
0
ns
t
R[9]
Operation Recovery Time
100
μ
s
Notes:
7. Tested initially and after any design or proces changes that may affect these parameters.
8. Test condition for the 45 ns part is a load capacitance of 30 pF
9. Full device operation requires linear V
CC
ramp from V
DR
to V
CC(min.)
>100
μ
s.
V
CC
Typ
V
CC
OUTPUT
R2
50 pF
INCLUDING
JIG AND
SCOPE
GND
90%
10%
90%
10%
OUTPUT
V
TH
Equivalent to:
THé VENIN EQUIVALENT
ALL INPUT PULSES
R
TH
R1
Rise TIme: 1 V/ns
Fall Time: 1 V/ns
Parameters
R1
R2
R
TH
V
TH
2.5V
16600
15400
8000
1.2
3.0V
1103
1554
645
1.75
Unit
Ohms
Ohms
Ohms
Volts
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY62126DV30L-70ZSI | 1-Mbit (64K x 16) Static RAM |
| CY62126DV30L-55ZSI | 1-Mbit (64K x 16) Static RAM |
| CY62126DV30L-70BVI | 1-Mbit (64K x 16) Static RAM |
| CY62126DV30LL | 1-Mbit (64K x 16) Static RAM |
| CY62126DV30LL-55ZSI | 1-Mbit (64K x 16) Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY62126DV30LL-55BVXI | 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述: |
| CY62126DV30LL-55ZI | 制造商:Cypress Semiconductor 功能描述: |
| CY62126DV30LL-55ZSI | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:1-Mbit (64K x 16) Static RAM |
| CY62126DV30LL-55ZSXI | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:1-Mbit (64K x 16) Static RAM |
| CY62126DV30LL-55ZXI | 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述: |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。