參數(shù)資料
型號: CY62126DV30L-55BVI
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 1-Mbit (64K x 16) Static RAM
中文描述: 64K X 16 STANDARD SRAM, 55 ns, PBGA48
封裝: 6 X 8 MM, 1 MM HEIGHT, VFBGA-48
文件頁數(shù): 3/11頁
文件大?。?/td> 398K
代理商: CY62126DV30L-55BVI
CY62126DV30
MoBL
Document #: 38-05230 Rev. *E
Page 3 of 11
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................–65°C to +150°C
Ambient Temperature with
Power Applied.............................................–55°C to +125°C
Supply Voltage to Ground
Potential...........................................................
0.3V to 3.9V
DC Voltage Applied to Outputs
in High-Z State
[5.]
...................................
0.3V to V
CC
+ 0.3V
DC Electrical Characteristics
(Over the Operating Range)
DC Input Voltage
[5]
................................
0.3V to V
CC
+ 0.3V
Output Current into Outputs (LOW).............................20 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current ....................................................> 200 mA
Operating Range
Range
Industrial
Ambient Temperature (T
A
)
40°C to +85°C
V
CC
[6.]
2.2V to 3.6V
Parameter Description
Test Conditions
CY62126DV30-45
Min. Typ.
[4]
Max. Min. Typ.
[4]
Max. Min Typ.
[4]
Max.
CY62126DV30-55
CY62126DV30-70
Unit
V
OH
Output HIGH
Voltage
2.2 < V
CC
< 2.7
2.7 < V
CC
< 3.6
2.2 < V
CC
< 2.7
2.7 < V
CC
< 3.6
2.2 < V
CC
< 2.7
I
OH
=
0.1 mA
I
OH
=
1.0 mA
I
OL
= 0.1 mA
I
OL
= 2.1 mA
2.0
2.0
2.0
V
2.4
2.4
2.4
V
OL
Output LOW
Voltage
0.4
0.4
0.4
V
0.4
0.4
0.4
V
IH
Input HIGH
Voltage
1.8
V
CC
+ 0.3
1.8
V
CC
+ 0.3
1.8
V
CC
+ 0.3
V
2.7 < V
CC
< 3.6
2.2
V
CC
+ 0.3
2.2
V
CC
+ 0.3
2.2
V
CC
+ 0.3
V
IL
Input LOW
Voltage
2.2 < V
CC
< 2.7
0.3
0.6
0.3
0.6
0.
3
0.
3
1
0.6
V
2.7 < V
CC
< 3.6
0.3
0.8
0.3
0.8
0.8
I
IX
Input
Leakage
Current
GND < V
I
< V
CC
1
+1
1
+1
+1
μ
A
I
OZ
Output
Leakage
Current
GND < V
O
< V
CC
, Output
Disabled
1
+1
1
+1
1
+1
μ
A
I
CC
V
CC
Operating
Supply
Current
f = f
MAX
= 1/t
RC
f = 1 MHz
V
CC
= 3.6V,
I
OUT
= 0 mA,
CMOS level
6.5
13
5
10
5
10
mA
0.85
1.5
0.85
1.5
0.85
1.5
I
SB1
Automatic
CE
Power-down
Current
CMOS Inputs
CE > V
CC
0.2V,
V
IN
> V
CC
0.2V, V
IN
< 0.2V,
f = f
MAX
(Address and Data
Only),
f = 0 (OE, WE, BHE and BLE)
CE > V
CC
0.2V,
V
IN
> V
CC
0.2V or
V
IN
< 0.2V,
f = 0, V
CC
= 3.6V
L
1.5
5
1.5
5
1.5
5
μ
A
LL
1.5
4
1.5
4
1.5
4
I
SB2
Automatic
CE
Power-down
Current
CMOS Inputs
L
1.5
5
1.5
5
1.5
5
μ
A
LL
1.5
4
1.5
4
1.5
4
Notes:
5. V
=
2.0V for pulse durations less than 20 ns., V
= V
CC
+ 0.75V for pulse durations less than 20 ns.
6. Full device operation requires linear ramp of V
CC
from 0V to V
CC(min)
& V
CC
must be stable at V
CC(min)
for 500
μ
s.
相關(guān)PDF資料
PDF描述
CY62126DV30LL-70ZSI 1-Mbit (64K x 16) Static RAM
CY62126DV30LL-70ZSXI 1-Mbit (64K x 16) Static RAM
CY62126BV 64K x 16 Static RAM
CY62126BVLL-55BAI 64K x 16 Static RAM
CY62126BVLL-55ZI 64K x 16 Static RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY62126DV30L-55BVIT 制造商:Cypress Semiconductor 功能描述:SRAM Chip Async Single 3V 1M-Bit 64K x 16 55ns 48-Pin VFBGA T/R
CY62126DV30L-55BVXE 功能描述:靜態(tài)隨機(jī)存取存儲器 SLO 3.0V SUPER LO PWR 64K X 16 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY62126DV30L-55BVXET 功能描述:靜態(tài)隨機(jī)存取存儲器 SLO 3.0V SUPER LO PWR 64K X 16 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY62126DV30L-55ZI 制造商:Cypress Semiconductor 功能描述:SRAM Chip Async Single 3V 1M-Bit 64K x 16 55ns 44-Pin TSOP-II 制造商:Rochester Electronics LLC 功能描述:1MB (64K X 16)- 3.0V SLOW ASYNCH SRAM - Bulk
CY62126DV30L-55ZIT 制造商:Rochester Electronics LLC 功能描述:- Bulk