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參數(shù)資料
| 型號： | CY14E064L |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | 64-Kbit (8K x 8) nvSRAM |
| 中文描述： | 64千位（8K的× 8）非易失 |
| 文件頁數(shù)： | 1/16頁 |
| 文件大?。?/td> | 826K |
| 代理商： | CY14E064L |
PRELIMINARY
64-Kbit (8K x 8) nvSRAM
Functional Description
CY14E064L
Cypress Semiconductor Corporation
Document #: 001-06543 Rev. *C
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised November 28, 2006
Features
25 ns and 45 ns Access Times
“Hands-off” Automatic
STORE
on Power Down with
external 68
μ
F
capacitor
STORE
to QuantumTrap
Nonvolatile Elements is
initiated by Software, Hardware or Autostore
on
Power-down
RECALL
to SRAM Initiated by Software or Power-up
Unlimited
READ, WRITE
and
RECALL
Cycles
10 mA Typical I
CC
at 200 ns Cycle Time
1,000,000
STORE
Cycles to QuantumTrap
100-Year Data Retention to QuantumTrap
Single 5V Operation +10%
Commercial Temperature
SOIC Package
RoHS Compliance
The Cypress CY14E064L is a fast static RAM with a nonvol-
atile element in each memory cell. The embedded nonvolatile
elements incorporate QuantumTrap technology producing the
world’s most reliable nonvolatile memory. The SRAM provides
unlimited read and write cycles, while independent, nonvolatile
data resides in the highly reliable QuantumTrap cell. Data
transfers from the SRAM to the nonvolatile elements (the
STORE operation) takes place automatically at power down.
On power-up, data is restored to the SRAM (the RECALL
operation) from the nonvolatile memory. Both the STORE and
RECALL operations are also available under software control.
A hardware STORE may be initiated with HSB pin.
Logic Block Diagram
STORE/
RECALL
CONTROL
POWER
CONTROL
SOFTWARE
DETECT
STATIC RAM
ARRAY
128 X 512
Quantum Trap
128 X 512
STORE
RECALL
COLUMN I/O
COLUMN DEC
R
I
OE
CE
WE
HSB
V
CC
V
CAP
A
0
-
A
12
A
0
A
1
A
2
A
3
A
4
A
10
A
5
A
6
A
7
A
8
A
9
A
11
A
12
DQ
0
DQ
1
DQ
2
DQ
3
DQ
4
DQ
5
DQ
6
DQ
7
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY14E064L-SZ25XCT | 64-Kbit (8K x 8) nvSRAM |
| CY14E064L-SZ45XCT | 64-Kbit (8K x 8) nvSRAM |
| CY14E256L | 256-Kbit (32K x 8) nvSRAM |
| CY14E256L-SZ25XCT | 256-Kbit (32K x 8) nvSRAM |
| CY14E256L-SZ45XCT | 256-Kbit (32K x 8) nvSRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY14E064L-SZ25XC | 制造商:Cypress Semiconductor 功能描述: |
| CY14E064L-SZ25XI | 制造商:Cypress Semiconductor 功能描述: |
| CY14E064L-SZ35XC | 功能描述:NVRAM nvSRAM 8Kx8 5V COM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| CY14E064L-SZ35XI | 功能描述:NVRAM nvSRAM 8Kx8 5V IND RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| CY14E064L-SZ45XC | 功能描述:NVRAM nvSRAM 8Kx8 5V COM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
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