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參數(shù)資料
| 型號： | CY14B256L-SZ25XCT |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 256-Kbit (32K x 8) nvSRAM |
| 中文描述： | 32K X 8 NON-VOLATILE SRAM, 25 ns, PDSO32 |
| 封裝： | 0.300 INCH, ROHS COMPLIANT, MO-119, SOIC-32 |
| 文件頁數(shù)： | 1/17頁 |
| 文件大?。?/td> | 1094K |
| 代理商： | CY14B256L-SZ25XCT |
PRELIMINARY
256-Kbit (32K x 8) nvSRAM
CY14B256L
Cypress Semiconductor Corporation
Document #: 001-06422 Rev. *E
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised January 27, 2007
Features
25 ns, 35 ns, and 45 ns access times
“Hands-off” automatic
STORE
on power down with only a
small capacitor
STORE
to QuantumTrap
nonvolatile elements is initiated
by software, device pin, or AutoStore on power down
RECALL
to SRAM initiated by software or power up
Infinite
READ, WRITE,
and
RECALL
cycles
10 mA typical I
CC
at 200 ns cycle time
200,000
STORE
cycles to QuantumTrap
20-year data retention
@
55
°
C
Single 3V operation with tolerance of +15%, –10%
Commercial and industrial temperature
SOIC and SSOP packages
RoHS compliance
Functional Description
The Cypress CY14B256L is a fast static RAM with a nonvol-
atile element in each memory cell. The embedded nonvolatile
elements incorporate QuantumTrap technology producing the
world’s most reliable nonvolatile memory. The SRAM provides
infinite read and write cycles while independent, nonvolatile
data resides in the highly reliable QuantumTrap cell. Data
transfers from the SRAM to the nonvolatile elements (the
STORE operation) takes place automatically at power down.
On power up, data is restored to the SRAM (the RECALL
operation) from the nonvolatile memory. The STORE and
RECALL operations are also available under software control.
Logic Block Diagram
STORE/
RECALL
CONTROL
POWER
CONTROL
SOFTWARE
DETECT
STATIC RAM
ARRAY
512 X 512
QuantumTrap
512 X 512
STORE
RECALL
COLUMN IO
COLUMN DEC
R
I
OE
CE
WE
HSB
V
CC
V
CAP
A
13
-
A
0
A
0
A
1
A
2
A
3
A
4
A
10
A
5
A
6
A
7
A
8
A
9
A
11
A
12
A
13
A
14
DQ
0
DQ
1
DQ
2
DQ
3
DQ
4
DQ
5
DQ
6
DQ
7
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY14B256L-SZ35XCT | 256-Kbit (32K x 8) nvSRAM |
| CY14B256L-SZ45XCT | 256-Kbit (32K x 8) nvSRAM |
| CY14B256L-SZ45XI | 256-Kbit (32K x 8) nvSRAM |
| CY14B256L-SZ45XIT | 256-Kbit (32K x 8) nvSRAM |
| CY14E064L | 64-Kbit (8K x 8) nvSRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY14B256L-SZ25XI | 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述: |
| CY14B256L-SZ25XIT | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:256 Kbit (32K x 8) nvSRAM |
| CY14B256L-SZ35XC | 功能描述:NVRAM nvSRAM 32Kx8 COM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| CY14B256L-SZ35XCT | 功能描述:NVRAM nvSRAM 32Kx8 3V RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| CY14B256L-SZ35XI | 功能描述:NVRAM nvSRAM 32Kx8 3V IND RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
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