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參數(shù)資料
| 型號： | CY14B101K-SP35XCT |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 1 Mbit (128K x 8) nvSRAM With Real-Time Clock |
| 中文描述： | 128K X 8 NON-VOLATILE SRAM, 35 ns, PDSO48 |
| 封裝： | ROHS COMPLIANT, SSOP-48 |
| 文件頁數(shù)： | 1/24頁 |
| 文件大?。?/td> | 1175K |
| 代理商： | CY14B101K-SP35XCT |
1 Mbit (128K x 8) nvSRAM With Real-Time Clock
PRELIMINARY
CY14B101K
Cypress Semiconductor Corporation
Document #: 001-06401 Rev. *E
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised March 01, 2007
Features
Data integrity of Cypress nvSRAM combined with full
featured Real-Time Clock (RTC)
Watchdog timer
Clock alarm with programmable interrupts
Capacitor or battery backup for RTC
25 ns, 35 ns, and 45 ns access times
“Hands-off” automatic
STORE
on power down with only a
small capacitor
STORE
to QuantumTrap initiated by software, device pin,
or on power down
RECALL
to SRAM initiated by software or on power up
Infinite
READ, WRITE,
and
RECALL
cycles
High reliability
— Endurance to 200,000 cycles
—
Data retention: 20 years
@55
°
C
10 mA typical I
CC
at 200 ns cycle time
Single 3V operation +20%, –10%
Commercial and industrial temperature
SSOP package (ROHS compliant)
Functional Description
The Cypress CY14B101K combines a 1 Mbit nonvolatile static
RAM with a full featured real-time clock in a monolithic
integrated circuit. The embedded nonvolatile elements
incorporate QuantumTrap technology producing the world’s
most reliable nonvolatile memory. The SRAM can be read and
written an infinite number of times, while independent,
nonvolatile data resides in the nonvolatile elements.
The Real-Time Clock function provides an accurate clock with
leap year tracking and a programmable, high accuracy
oscillator. The alarm function is programmable for one time
alarm or periodic seconds, minutes, hours, or days. There is
also a programmable watchdog timer for process control.
Logic Block Diagram
STORE/
RECALL
POWER
CONTROL
SOFTWARE
DETECT
STATIC RAM
ARRAY
1024 X 1024
QuantumTrap
1024 x 1024
STORE
RECALL
COLUMN IO
COLUMN DEC
R
I
OE
CE
WE
HSB
V
CC
V
CAP
A
15
-
A
0
A
0
A
1
A
2
A
3
A
4
A
10
A
11
A
5
A
6
A
7
A
8
A
9
A
12
A
13
A
14
A
15
A
16
DQ
0
DQ
1
DQ
2
DQ
3
DQ
4
DQ
5
DQ
6
DQ
7
RTC
MUX
A
16
-
A
0
x
1
x
2
INT
V
RTCbat
V
RTCcap
[+] Feedback
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| CY14B101K-SP45XCT | 1 Mbit (128K x 8) nvSRAM With Real-Time Clock |
| CY14B101K-SP45XI | 1 Mbit (128K x 8) nvSRAM With Real-Time Clock |
| CY14B101K-SP45XIT | 1 Mbit (128K x 8) nvSRAM With Real-Time Clock |
| CY14B101L | 1-Mbit (128K x 8) nvSRAM |
| CY14B101L-SP25XCT | 1-Mbit (128K x 8) nvSRAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| CY14B101K-SP35XI | 功能描述:NVRAM 128Kx8 RTC 3V nvSRAM IND RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| CY14B101K-SP35XIT | 功能描述:NVRAM nvSRAM 128Kx8 RTC 3V RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| CY14B101K-SP45XC | 功能描述:NVRAM 128Kx8 RTC 3V nvSRAM COM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| CY14B101K-SP45XCT | 功能描述:NVRAM nvSRAM 128Kx8 RTC 3V RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| CY14B101K-SP45XI | 功能描述:NVRAM 128Kx8 RTC 3V nvSRAM IND RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
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