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參數(shù)資料
| 型號： | CXK5T8257BYM-10LLX |
| 廠商： | Sony Corporation |
| 英文描述： | 32768-word X 8-bit High Speed CMOS Static RAM |
| 中文描述： | 32768字× 8位高速CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 209K |
| 代理商： | CXK5T8257BYM-10LLX |
– 4 –
CXK5T8257BTM/BYM/BM
Input capacitance
I/O capacitance
Item
Symbol Test condition
Min.
Typ.
Max.
Unit
C
IN
C
I/O
—
—
—
—
8
10
pF
pF
V
IN
= 0V
V
I/O
= 0V
TTL
C
L
AC Characteristics
AC test conditions
(Ta = –25 to +85°C)
1
C
L
includes scope and jig capacitances.
I/O capacitance
(Ta = 25°C, f = 1MHz)
Note)
This parameter is sampled and is not 100% tested.
Input pulse high level
Input pulse low level
Input rise time
Input fall time
Input and output reference level
Output load conditions
V
IH
= 2.4V
V
IL
= 0.4V
t
r = 5ns
t
f = 5ns
1.4V
C
L
1
= 100pF, 1TTL
C
L
1
= 100pF, 1TTL
Item
V
CC
= 2.7 to 3.6V
Conditions
V
IH
= 2.2V
V
IL
= 0.6V
t
r = 5ns
t
f = 5ns
1.4V
C
L
1
= 30pF, 1TTL
C
L
1
= 100pF, 1TTL
V
CC
= 3.3V ± 0.3V
-10LLX
-12LLX
相關PDF資料 |
PDF描述 |
|---|---|
| CXK5T8257BYM-12LLX | 32768-word X 8-bit High Speed CMOS Static RAM |
| CXK5T8257BM | 32768-word X 8-bit High Speed CMOS Static RAM |
| CXK5T8257BM-10LLX | 32768-word X 8-bit High Speed CMOS Static RAM |
| CXK5T8257BM-12LLX | 32768-word X 8-bit High Speed CMOS Static RAM |
| CXK5T8257BTM | 32768-word X 8-bit High Speed CMOS Static RAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| CXK5T8257BYM-12LLX | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:32768-word X 8-bit High Speed CMOS Static RAM |
| CXK5T8512TM | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:65536-word X 8-bit High Speed CMOS Static RAM |
| CXK5T8512TM/TN-10LLX | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:65536-word x 8-bit High Speed CMOS Static RAM |
| CXK5T8512TM/TN-12LLX | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:65536-word x 8-bit High Speed CMOS Static RAM |
| CXK5T8512TM-10LLX | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:65536-word X 8-bit High Speed CMOS Static RAM |
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