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參數(shù)資料
| 型號： | CXK591000YM-70LL |
| 廠商： | Sony Corporation |
| 英文描述： | 131,072-word X 9-bit High Speed CMOS Static RAM |
| 中文描述： | 131,072字× 9位高速CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 8/13頁 |
| 文件大?。?/td> | 271K |
| 代理商： | CXK591000YM-70LL |
– 8 –
CXK591000TM/YM/M
1
Write is executed when both CE1 and WE are at low and CE2 is at high simultaneously.
2
Do not apply the data input voltage of the opposite phase to the output while I/O pin is in output condition.
3
t
WR1
is tested from either the rising edge of CE1 or the falling edge of CE2, whichever comes earlier, until the
end of the write cycle.
Write cycle (3) : CE2 control
Address
OE
t
WC
t
AW
Data valid
t
CW
t
WR1
t
WP
t
DW
t
DH
High impedance
CE1
WE
Data out
Data in
t
AS
t
CW
(
3
)
CE2
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