參數(shù)資料
型號: CXK591000YM-70LL
廠商: Sony Corporation
英文描述: 131,072-word X 9-bit High Speed CMOS Static RAM
中文描述: 131,072字× 9位高速CMOS靜態(tài)RAM
文件頁數(shù): 5/13頁
文件大小: 271K
代理商: CXK591000YM-70LL
– 5 –
CXK591000TM/YM/M
Item
Symbol
-55LL
Min.
Max.
Min.
Max.
Min.
Max.
-70LL
-10LL
Unit
t
RC
t
AA
t
CO1
t
CO2
t
OE
t
OH
t
LZ1
,
t
LZ2
t
OLZ
t
HZ1
,
t
HZ2
t
OHZ
55
15
10
5
55
55
55
30
25
25
70
15
10
5
70
70
70
40
25
25
100
15
10
5
100
100
100
50
35
35
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Read cycle time
Address access time
Chip enable access time (CE1)
Chip enable access time (CE2)
Output enable to output valid
Output hold from address change
Chip enable to output in low Z (CE1, CE2)
Output enable to output in low Z (OE)
Chip disable to output in high Z (CE1, CE2)
Output disable to output in high Z (OE)
t
HZ1
, t
HZ2
and t
OHZ
are defined as the time required for outputs to turn to high impedance state and are not
referred to as output voltage levels.
Read cycle
(WE = "H")
t
WHZ
is defined as the time required for outputs to turn to high impedance state and is not referred to as
output voltage level.
Item
Symbol
-55LL
Min.
Max.
Min.
Max.
Min.
Max.
-70LL
-10LL
Unit
t
WC
t
AW
t
CW
t
DW
t
DH
t
WP
t
AS
t
WR
t
WR1
t
OW
t
WHZ
55
50
50
25
0
40
0
0
0
10
25
70
60
60
30
0
50
0
0
0
10
25
100
70
70
40
0
60
0
0
0
10
30
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Write cycle time
Address valid to end of write
Chip enable to end of write
Data to write time overlap
Data hold from write time
Write pulse width
Address setup time
Write recovery time (WE)
Write recovery time (CE1, CE2)
Output active from end of write
Write to output in high Z
Write cycle
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