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參數(shù)資料
| 型號(hào)： | CXK591000YM-55LL |
| 廠商： | Sony Corporation |
| 英文描述： | 131,072-word X 9-bit High Speed CMOS Static RAM |
| 中文描述： | 131,072字× 9位高速CMOS靜態(tài)RAM |
| 文件頁(yè)數(shù)： | 3/13頁(yè) |
| 文件大?。?/td> | 271K |
| 代理商： | CXK591000YM-55LL |
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– 3 –
CXK591000TM/YM/M
Supply voltage
Input high voltage
Input low voltage
V
IL
= –3.0V Min. for pulse width less than 50ns.
Item
Symbol
Min.
Typ.
Max.
Unit
V
CC
V
IH
V
IL
4.5
2.2
–0.3
5.0
—
—
5.5
V
CC
+ 0.3
0.8
V
V
V
DC Recommended Operating Conditions
(Ta = 0 to +70°C, GND = 0V)
Input leakage current
Output leakage
current
Operating power supply
current
I
LI
I
LO
I
CC1
V
IN
= GND to V
CC
CE1 = V
IH
or CE2 = V
IL
or
OE = V
IH
or WE = V
IL
V
I/O
= GND to V
CC
CE1 = V
IL
, CE2 = V
IH
V
IN
= V
IH
or V
IL
I
OUT
= 0mA
-55LL
-70LL
-10LL
0 to +70°C
0 to +40°C
+25°C
–1
–1
—
—
—
—
—
12
24
—
—
—
—
—
—
0.8
0.6
24
5
2.4
3
μA
mA
—
—
8
50
45
40
+1
+1
17
100
80
70
μA
μA
mA
mA
mA
Item
System
Min.
Typ.
Max.
Unit
Test conditions
Electrical Characteristics
DC Characteristics
(V
CC
= 5V ± 10%, GND = 0V, Ta = 0 to +70°C)
V
CC
= 5V, Ta = 25°C
Average operating current
Output high voltage
Output low voltage
Standby current
I
CC2
I
CC3
I
SB1
I
SB2
V
OH
V
OL
Min. cycle
duty = 100%
I
OUT
= 0mA
Cycle time 1μs
duty = 100%
I
OUT
= 0mA
CE1
≤
0.2V
CE2
≥
Vcc – 0.2V
V
IL
≤
0.2V
V
IH
≥
Vcc – 0.2V
CE2
≤
0.2V
CE1
≥
Vcc – 0.2V
CE2
≥
Vcc – 0.2V
CE1 = V
IH
or CE2 = V
IL
I
OL
= 2.1mA
2.4
—
—
—
—
0.4
V
V
I
OH
= –1.0mA
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CXK591000YM-70LL | 制造商:SONY 制造商全稱(chēng):Sony Corporation 功能描述:131,072-word X 9-bit High Speed CMOS Static RAM |
| CXK59288J-15 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x9 SRAM |
| CXK59288P-15 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x9 SRAM |
| CXK59288P-17 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x9 SRAM |
| CXK59289J-20 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x9 SRAM |
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