參數(shù)資料
型號: CXK591000YM-55LL
廠商: Sony Corporation
英文描述: 131,072-word X 9-bit High Speed CMOS Static RAM
中文描述: 131,072字× 9位高速CMOS靜態(tài)RAM
文件頁數(shù): 1/13頁
文件大?。?/td> 271K
代理商: CXK591000YM-55LL
Description
The CXK591000TM/YM/M is a high speed CMOS
static RAM organized as 131,072-words by 9 bits.
A polysilicon TFT cell technology realized
extremely low stand-by current and higher data
retention stability.
Special feature are low power consumption and
high speed.
The CXK591000TM/YM/M is a suitable RAM for
portable equipment with battery back up and parity
bit.
Features
Fast access time
CXK591000TM/YM/M
-55LL
-70LL
-10LL
Low standby current
CXK591000TM/YM/M
-55LL/70LL/10LL
Low data retention current
CXK591000TM/YM/M
-55LL/70LL/10LL
Single +5V supply: 5V ± 10%.
Low voltage date retention: 2.0V (Min.)
Broad package line-up
CXK591000TM/YM
8mm
×
20mm 32 pin TSOP Package
CXK591000M
Package
(Access time)
55ns (Max.)
70ns (Max.)
100ns (Max.)
24μA (Max.)
14μA (Max.)
525mil 32 pin SOP
Function
131072 word
×
9 bit static RAM
Structure
Silicon gate CMOS IC
– 1 –
CXK591000TM/YM/M
-55LL/70LL/10LL
E93X06-PS
131,072-word
×
9-bit High Speed CMOS Static RAM
For the availability of this product, please contact the sales office.
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
CXK591000TM
32 pin TSOP (PIastic)
CXK591000YM
32 pin TSOP (PIastic)
CXK591000M
32 pin SOP (PIastic)
Block Diagram
I /O Gate
Column
Decoder
Row
Decoder
Buffer
Buffer
Buffer
V
CC
GND
I/O1 I/O9
OE
WE
CE1
CE2
A10
A11
A9
A8
A13
A15
A16
A14
A12
A7
A5
A4
A3
A2
A6
A1
A0
I /O Buffer
Memory
Matrix
1024
×
1152
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