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參數(shù)資料
| 型號(hào)： | CXG1030N |
| 廠商： | Sony Corporation |
| 英文描述： | Power Amplifier for PHS |
| 中文描述： | 功率放大器小靈通 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 141K |
| 代理商： | CXG1030N |
—2—
CXG1030N
Recommended Current Adjustment Method
(1) V
GG
2/P
IN
separate adjustment
(V
GG
2 adjustment 1)
(P
IN
adjustment 1)
(V
GG
2 adjustment 2)
(P
IN
adjustment 2)
When the RF input
(P
IN
) is off, the current
consumption (I
DD
) is
adjusted to 170 mA.
The output power
(P
OUT
) is adjusted
to 21.0 dBm.
The current
consumption (I
DD
)
is finely adjusted to
170 mA.
The output power
(P
OUT
) is finely
adjusted to 21.0 dBm.
Variation of I
DD
and
P
OUT
due to adjustment
I
DD
=170±20 mA
P
OUT
=21.0 dBm
I
DD
=170 mA
P
OUT
=21.0±0.2 dBm
I
DD
=170±5 mA
P
OUT
=21.0 dBm
(2) Simple adjustment
(I
DD
read)
(V
GG
2 setting)
(P
IN
adjustment)
When the RF input (P
IN
)
is off, the gate voltage
(V
GG
2) is set to 0.4 V
and I
DD
is read.
The formula
1
where
V
GG
2=f (I
DD
: V
GG
2=0.4 V)
is used to set V
GG
2.
The output power (P
OUT
)
is adjusted to 21.0 dBm.
Variation of I
DD
and P
OUT
due to adjustment
1
e.g. V
GG
2=a-b
×
I
DD
I
DD
=170±5 mA
P
OUT
=21.0 dBm
Block Diagram
Gate Bias Circuit
Pin Configuration
RF
IN
V
DD
1
V
DD
2
V
DD
3
RF
OUT
V
GG
1
V
CTL
V
GG
2
16
1
RF
IN
GND
GND
GND
GND
V
DD
1
V
DD
2
V
DD
3
GND
GND
V
GG
1
V
CTL
GND
V
GG
2
GND
RF
OUT
V
GG
2
V
GG
1
1k
Gate adjustment pin
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| CXG1040TN | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:High Isolation DPDT Switch |
| CXG1045N | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:GSM900/1800/1900 SPDT TX/RX Switch |
| CXG1047FN | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:Dual-Band 3V Power Amplifier for GSM900/DCS1800 Applications |
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