參數(shù)資料
型號(hào): CXG1030N
廠商: Sony Corporation
英文描述: Power Amplifier for PHS
中文描述: 功率放大器小靈通
文件頁(yè)數(shù): 1/5頁(yè)
文件大小: 141K
代理商: CXG1030N
—1—
E96706-TE
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
Power Amplifier for PHS
CXG1030N
16 pin SSOP (Plastic)
Absolute Maximum Ratings
(Ta=25 °C)
Supply voltage
Voltage between gate and source
V
DD
6
V
Vgs0
I
DD
P
D
Tch
Top
Tstg
1.5
500
3
175
V
Drain current
Power dissipation
Channel temperature
Operating temperature
Storage temperature
mA
W
°C
°C
°C
–35 to +85
–65 to +150
Description
The CXG1030N is a power amplifier for PHS. This
IC is designed using the Sony’s GaAs J-FET process
and operates at a single power supply.
Features
Output power
Positive power supply
Low current consumption
High power gain
Small mold package 16-pin SSOP
21 dBm
3.0 V
170 mA
39 dB Typ.
Structure
GaAs J-FET MMIC
1
Current consumption
1
Gate voltage adjustment value
Output power
2
Power gain
2
Adjacent channel leak power ratio
(600 kHz ±100 kHz)
1
Values where V
GG
1 and V
GG
2 are adjusted so that I
DD
becomes 170 mA when 21.0 dBm is output.
2
When 21.0 dBm is output.
Item
Symbol
I
DD
V
GG2
P
OUT
G
P
Min.
Typ.
170
0.4
Max.
Unit
mA
V
dBm
dB
0
0.8
21
36
39
ACPR600
–59
–54
dBc
Electrical Characteristics
V
DD
=3.0 V, V
CTL
=2.0 V, f=1.90 GHz
(Ta=25 °C)
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