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參數(shù)資料
| 型號(hào)： | CSD1306 |
| 廠商： | Continental Device India Limited |
| 英文描述： | NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
| 中文描述： | NPN硅外延平面晶體管 |
| 文件頁數(shù)： | 3/3頁 |
| 文件大?。?/td> | 76K |
| 代理商： | CSD1306 |
Notes
CSD1306
(SAW)
SOT-23
Formed SMD Package
CSD1306ERev_3 300103E
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished in the Data Sheet and
on the CDIL Web Site/CD are believed to be accurate and reliable. CDIL however, does not assume responsibility for
inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or
use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not
designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual
Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or
applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-2579 6150 Fax + 91-11-2579 9569, 2579 5290
e-mail sales@cdil.com www.cdil.com, www.cdilsemi.com
Continental Device India Limited
Data Sheet
Page 3 of 3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CSD1306D | NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
| CSD1306E | NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
| CSD1306F | NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
| CSD1489 | NPN EPITAXIAL PLANAR SILICON TRANSISTOR |
| CSB1058 | NPN EPITAXIAL PLANAR SILICON TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CSD1306D | 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
| CSD1306E | 制造商:RECTRON 制造商全稱:Rectron Semiconductor 功能描述:SOT-23 - Power Transistor and Darlingtons |
| CSD1306F | 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
| CSD1314 | 制造商:C&K Components 功能描述: |
| CSD13201W10 | 功能描述:MOSFET N-CH 12V 1.6A 4DSBGA 制造商:texas instruments 系列:NexFET?? 包裝:剪切帶（CT） 零件狀態(tài):有效 FET 類型:MOSFET N 通道，金屬氧化物 FET 功能:標(biāo)準(zhǔn) 漏源極電壓（Vdss）:12V 電流 - 連續(xù)漏極（Id）（25°C 時(shí)）:1.6A（Ta） 不同?Id，Vgs 時(shí)的?Rds On（最大值）:34 毫歐 @ 1A，4.5V 不同 Id 時(shí)的 Vgs（th）（最大值）:1.1V @ 250μA 不同 Vgs 時(shí)的柵極電荷（Qg）:2.9nC @ 4.5V 不同 Vds 時(shí)的輸入電容（Ciss）:462pF @ 6V 功率 - 最大值:1.2W 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:4-UFBGA，DSBGA 供應(yīng)商器件封裝:4-DSBGA（1x1） 標(biāo)準(zhǔn)包裝:1 |
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