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參數(shù)資料
| 型號(hào)： | CSC388ATM |
| 廠商： | Continental Device India Limited |
| 英文描述： | NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
| 中文描述： | NPN硅外延平面晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 162K |
| 代理商： | CSC388ATM |
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
CSC388ATM
TO - 92
Plastic Package
TV Final Picture IF Amplifier Applications
ABSOLUTE MAXIMUM RATINGS (Ta=25C )
DESCRIPTION
SYMBOL
VALUE
UNIT
Collector Base Voltage
VCBO
30
V
Collector Emitter Voltage
VCEO
25
V
Emitter Base Voltage
VEBO
4V
Collector Current
IC
50
mA
Emitter Current
IE
- 50
mA
Collector Power Dissipation
PC
300
mW
Operating And Storage Junction
Tj, Tstg
-55 to +125
C
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25C unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
TYP
MAX
UNIT
Collector Cut off Current
ICBO
VCB=30V, IE = 0
-
100
nA
Emitter Cut off Current
IEBO
VEB=3, IC=0
-
1.0
A
Collector Emitter Voltage
VCEO
IC=10mA, IB=0
25
--V
DC Current Gain
hFE
VCE=12.5V, IC=12.5mA
20
-
200
Collector Emitter Saturation
VCE(sat)
IC=15mA, IB=1.5mA
-
0.2
V
Voltage
Base Emitter Saturation Voltage
VBE(sat)
IC=15mA, IB=1.5mA
-
1.5
V
Collector Output Capacitance
Cob
VCB=10V, IE=0,f=1MHz
0.8
-
2.0
pF
Collector- Base Time Constant
Cc.rbb'
VCB=10V, IE= - 1mA
--
25
ps
f=30MHz
Transition Frequency
fT
VCE=12.5V, IC=12.5mA
300
-
MHz
Power Gain
Gpe
VCC=12.5V, IE= - 12.5mA
28
-
36
dB
f=45MHz
Continental Device India Limited
Data Sheet
Page 1 of 3
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
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| CSNX25 | SPECIALTY ANALOG CIRCUIT, XSS3 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CSC3930 | 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
| CSC3930B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
| CSC3930C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
| CSC3936 | 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
| CSC3936B | 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
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