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參數(shù)資料
| 型號： | CSD73Y |
| 廠商： | Continental Device India Limited |
| 英文描述： | NPN SILICON EPITAXIAL POWER TRANSISTOR |
| 中文描述： | NPN硅外延功率晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 172K |
| 代理商： | CSD73Y |
NPN SILICON EPITAXIAL POWER TRANSISTOR
CSD73
TO - 220
Plastic Package
Low Frequency High Power Amplifier
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
VALUE
UNIT
Collector - Base Voltage
VCBO
100
V
Collector- Emitter Voltage
VCEO
60
V
Emitter- Base Voltage
VEBO
5V
Collector Current
IC
5A
Collector Dissipation(Tc=25°C )
PC
30
W
Operating & Storage Junction
Tj, Tstg
-55 to +150
C
Temperature Range
ELECTRICAL CHARACTERISTICS (Tc=25C unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
TYP
MAX
UNIT
Collector - Base Voltage
VCBO
IC=1mA, IE=0
100
--
V
Collector- Emitter Voltage
VCEO
IC=20mA, IB=0
60
--
V
Collector- Base Voltage
VEBO
IE=1mA, IC=0
5
--
V
Collector Cut off Current
ICBO
VCB=100V, IE=0
--
5
mA
DC Current Gain
hFE
IC=1A, VCE=10V
70
-
240
Collector Emitter Saturation Voltage
VCE(sat)
IC=5A, IB=0.5A
-
2.0
V
Base Emitter Saturation Voltage
VBE(sat)
IC=5A, IB=0.5A
-
1.5
V
Base Emitter on Voltage
VBE(on) IC=1A, VCE=10V
-
0.75
-
V
Current Gain Bandwidth Product
fT
IC=0.3A, VCE=10V
-
20
-
MHz
Classification
O
Y
hFE
70 - 140
120 - 240
Continental Device India Limited
Data Sheet
1 of 3
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
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