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參數(shù)資料
| 型號： | CSC2331Y |
| 英文描述： | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 700MA I(C) | TO-237AA |
| 中文描述： | 晶體管|晶體管|叩| 60V的五（巴西）總裁| 700mA的一（c）|至237AA |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 41K |
| 代理商： | CSC2331Y |
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
PNP/NPN COMPLEMENTARY PLANAR SILICON TRANSISTORS
CSA931 (PNP)
CSC2331 (NPN)
TO-237
BCE
Low Frequency Amplifier And Medium Speed Switching
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)
DESCRIPTION
Collector -Base Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Operating And Storage Junction
Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
PC
Tj, Tstg
VALUE
80
60
8.0
700
1.0
-55 to +150
UNIT
V
V
V
mA
W
deg C
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
Collector -Base Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Cut off Current
Emitter Cut off Current
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
SYMBOL
VCBO
VCEO
VEBO
ICBO
IEBO
hFE*
VCE(Sat) * IC=500mA,IB=50mA
VBE(Sat) * IC=500mA,IB=50mA
TEST CONDITION
IC=100uA, IE=0
IC=10mA, IB=0
IE=100uA, IC=0
VCB=60V, IE=0
VEB=5V, IC=0
IC=50mA,VCE=2V
MIN
80
60
8.0
-
-
40
-
-
TYP
-
-
-
-
-
-
-
-
MAX
-
-
-
100
100
240
0.7
1.2
UNIT
V
V
V
nA
nA
V
V
Dynamic Characteristics
Collector Output Capacitance
Cob PNP VCB=10V, IE=0
NPN f=1MHz
-
-
13
8.0
-
-
pF
pF
Transition Frequency
ft PNP
NPN
R
40-80
VCE=10V,IC=50mA,
-
100
-
-
-
MHz
MHz
30
Y
CLASSIFICATION
hFE *
*Pulse Test : Pulse Width =350us, Duty Cycle=2%
O
70-140
120-240
IS / IECQC 700000
IS / IECQC 750100
IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
Data Sheet
Page 1 of 2
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