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參數(shù)資料
| 型號： | CSB1272 |
| 英文描述： | TRANSISTOR | BJT | DARLINGTON | PNP | 100V V(BR)CEO | 2A I(C) | TO-126 |
| 中文描述： | 晶體管|晶體管|達(dá)林頓|進(jìn)步黨| 100V的五（巴西）總裁|甲一（c）|至126 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 41K |
| 代理商： | CSB1272 |
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
PNP SILICON PLASTIC POWER DARLINGTON TRANSISTOR
CSB1272
(9AW)
TO126
MARKING : CDIL
B1272
Low Freq. Power Amp.
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)
DESCRIPTION
Collector -Base Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Peak*
Collector Power Dissipation @ Ta=25 deg C
Collector Power Dissipation @ Tc=25 deg C
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
VALUE
100
100
8.0
2.0
3.0
1.2
10
150
-55 to +150
UNIT
V
V
V
A
A
W
W
deg C
deg C
IC
PC
Tj
Tstg
*Single Pulse Pw=100ms
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified)
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Collector Cut off Current
Emitter Cut off Current
Collector Emitter Saturation Voltage
DC Current Gain
SYMBOL
VCEO
VCBO
ICBO
IEBO
VCE(Sat)** IC=1A,IB=1mA
hFE**
IC=1A, VCE=2V
TEST CONDITION
IC=5mA, IB=0
IC=50uA, IE=0
VCB=100V, IE=0
VBE=7V,IC=0
MIN
100
100
-
-
-
1.0
TYP
-
-
-
-
-
-
MAX
-
-
10
3.0
1.5
10
UNIT
V
V
uA
mA
V
K
Dynamic Characteristics
Collector Output Capacitance
Cob
VCB=10V, IE=0
f=1MHz
-
35
-
pF
**Pulse Test
IS / IECQC 700000
IS / IECQC 750100
IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
Data Sheet
Page 1 of 2
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