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參數(shù)資料
| 型號： | CSC2120 |
| 廠商： | Continental Device India Limited |
| 英文描述： | NPN SILICON EPITAXIAL TRANSISTOR |
| 中文描述： | NPN硅外延晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 87K |
| 代理商： | CSC2120 |
NPN SILICON EPITAXIAL TRANSISTOR
CSC2120
TO-92
BCE
Audio Power Amplifier Applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified )
DESCRIPTION
SYMBOL
VALUE
UNIT
Collector -Base Voltage
VCBO
35
V
Collector -Emitter Voltage
VCEO
30
V
Emitter Base Voltage
VEBO
5.0
V
Collector Current Continuous
IC
800
mA
Emitter Current
IE
800
mA
Collector Power Dissipation
PC
600
mW
Operating And Storage Junction
Tj, Tstg
-55 to +150
deg C
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNIT
Collector Cut off Current
ICBO
VCB=35V, IE=0
-
100
nA
Emitter Cut off Current
IEBO
VEB=5V, IC=0
-
100
nA
Collector -Emitter Voltage
VCEO
IC=10mA, IB=0
30
-
V
DC Current Gain
hFE*(1)
IC=100mA, VCE=1V
100
-
320
hFE*(2)
IC=700mA, VCE=1V
35
-
Collector Emitter Saturation Voltage
VCE(Sat) * IC=500mA, IB=20mA
-
0.5
V
Base Emitter Voltage
VBE(on)
IC=10mA, VCE=1V
0.5
-
0.8
V
Dynamic Characteristics
Collector Output Capacitance
Cob
VCB=10V, IE=0,
-
13
-
pF
f=1MHz
Transition Frequency
ft
VCE=5V,IC=10mA,
-
120
-
MHz
*(1)hFE CLASSIFICATION
0 : 100 - 200,
Y : 160 - 320,
*Pulse Test : Pulse Width =300us, Duty Cycle=2%
Continental Device India Limited
Data Sheet
Page 1 of 3
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CSC2120O | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 800MA I(C) | TO-92 |
| CSC2120Y | 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:NPN SILICON EPITAXIAL TRANSISTOR |
| CSC22 | 制造商:CamdenBoss Ltd, 功能描述:Bulk |
| CSC2216 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 50MA I(C) | TO-92 |
| CSC2229Y | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 500MA I(C) | TO-92 |
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