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參數(shù)資料
| 型號： | CSA940 |
| 廠商： | Continental Device India Limited |
| 英文描述： | CSA940 PNP PLASTIC POWER TRANSISTOR, CSC2073 NPN PLASTIC POWER TRANSISTOR |
| 中文描述： | CSA940進步黨塑料功率晶體管，CSC2073 npn型塑料功率晶體管 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 56K |
| 代理商： | CSA940 |
Continental Device India Limited
Data Sheet
Page 2 of 3
Collector current
IC
max.
1.5 A
Base current
IB
max.
0.5 A
Total power dissipation up to TC = 25°C
Ptot
max.
25 W
Total power dissipation up to TA = 25°C
Ptot
max.
1.5 W
Junction temperature
Tj
max.
150 C
Storage temperature
Tstg
–65 to +150 C
CHARACTERISTICS
Tamb = 25°C unless otherwise specified
Collector cutoff current
IE = 0; VCB = 120 V
ICBO
max.
10 A
Emitter cut-off current
IC = 0; VEB = 5 V
IEBO
max.
10 A
Breakdown voltages
IC = 1 mA; IB = 0
VCEO
min.
150 V
IC = 1 mA; IE = 0
VCBO
min.
150 V
IE = 1 mA; IC = 0
VEBO
min.
5.0 V
Saturation voltages
IC = 500 mA; IB = 50 mA
VCEsat
max.
1.5 V
Base emitter on voltage
IC = 500 mA; VCE = 10 V
VBE(on)
min.
0.65 V
max.
0.85 V
D.C. current gain
IC = 500 mA; VCE = 10 V
hFE
min.
40
max.
140
Output capacitance at f = 1 MHz
IE = 0; VCB = 10 V
NPN
Co
typ.
35 pF
PNP
typ.
55 pF
Transition frequency
IC = 500 mA; VCE = 10 V
fT
typ.
4 MHz
CSA940, CSC2073
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