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參數(shù)資料
| 型號： | CS20-22MOF1 |
| 廠商： | IXYS CORP |
| 元件分類： | 晶閘管 |
| 英文描述： | High Voltage Phase Control Thyristorin High Voltage ISOPLUS i4-PAC-TM |
| 中文描述： | 28.26 A, 2200 V, SCR |
| 封裝： | ISOPLUS, I4PAC-3 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 83K |
| 代理商： | CS20-22MOF1 |
2000 IXYS All rights reserved
1 - 2
0
IXYS reserves the right to change limits, test conditions and dimensions.
V
DRM
= V
RRM
= 2200 V
I
T(AV)
I
TSM
= 18 A
= 200 A
High Voltage
Phase Control
Thyristor
in High Voltage
ISOPLUS i4-PAC
TM
1
5
Advanced Technical Information
CS 20-22moF1
Features
high voltage thyristor
- for line frequency
- chip technology for long term
stability
ISOPLUS i4-PAC
TM
high voltage package
- isolated back surface
- enlarged creepage towards heatsink
- enlarged creepage between high
voltage pins
- application friendly pinout
- high reliability
- industry standard outline
Applications
controlled rectifiers
- power supplies
- drives
AC switches
capacitor discharge control
- flash tubes
- x ray and laser generators
Thyristors
Symbol
Conditions
Maximum Ratings
V
DRM
, V
RRM
2200
V
I
T(AV)
I
T(AV)
sine 180°; T
C
= 90°C
square; d =
1
/
3
; T
C
= 90°C
18
16
A
A
I
TSM
sine 180°; t = 10 ms; V
R
= 0 V; T
VJ
= 25°C
200
A
(di/dt)
cr
T
= T
f = 50 Hz, t
P
= 200 μs
V
D
=
2
/
V
DRM
I
G
= 0.45 A
di
G
/dt = 0.45 A/μs
repetitive, I
T
= 40 A
100
A/μs
non repetitive, I
T
= 20 A
250
A/μs
(dv/dt)
cr
T
VJ
= T
;
R
GK
= ; method 1 (linear voltage rise)
V
=
2
/
V
2500
V/μs
Symbol
Conditions
Characteristic Values
(T
VJ
= 25 C, unless otherwise specified)
min.
typ.
max.
V
T
I
T
= 20 A; T
VJ
= 25 C
T
VJ
=125 C
1.3
1.3
1.5
V
V
V
GT
I
GT
V
D
= 6 V
2.3
250 mA
V
V
GD
I
GD
T
VJ
= T
VJM
; V
D
=
2
/
3
V
DRM
0.2
V
5 mA
I
L
t
P
= 10 s; V
D
= 6 V
I
G
= 0.45 A; di
G
/dt = 0.45 A/μs
500 mA
I
H
V
D
= 6 V; R
GK
=
mA
t
gd
V
D
= V
I
G
= 0.45 A; di
G
/dt = 0.45 A/μs
2
μs
I
R
, I
D
V
R
= V
RRM
; V
D
= V
DRM
;T
VJ
= 25 C
50
μA
mA
VJ
= 125 C
2
R
thJC
DC current
0.92 K/W
V
RSM
V
DSM
V
RRM
V
DRM
Type
V
V
2100
2000
CS 20-22moF1
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