
2001 IXYS All rights reserved
IXYS reserves the right to change limits, conditions and dimensions.
Phase Control Thyristor
ISOPLUS220
TM
Electrically Isolated Back Surface
* Patent pending
ISOPLUS220
TM
3
2
Isolated back surface *
1
A
C
G
CS 29
V
RRM
I
T(RMS)
I
T(AV)M
= 800 - 1200 V
= 35 A
= 23 A
ADVANCE TECHNICAL INFORMATION
V
RSM
V
DSM
V
V
RRM
V
DRM
V
Type
800
1200
800
1200
CS 29-08io1C
CS 29-12io1C
Symbol
Test Conditions
Maximum Ratings
I
T(RMS)
I
T(AV)M
T
VJ
= T
VJM
T
C
= 95
C; 180
°
sine (I
T(RMS)
current limit)
35
23
A
A
I
TSM
T
VJ
= 45
°
C;
V
R
= 0 V
T
VJ
= T
VJM
V
R
= 0 V
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
200
215
A
A
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
175
185
A
A
I
2
t
T
VJ
= 45
°
C
V
R
= 0 V
T
VJ
= T
VJM
V
R
= 0 V
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
200
195
A
2
s
A
2
s
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
155
145
A
2
s
A
2
s
(di/dt)
cr
T
VJ
= T
VJM
f = 50
Hz, t
P
=200
μ
s
V
D
= 2/3 V
DRM
I
G
= 0.2 A
di
G
/dt = 0.2 A/
μ
s
repetitive, I
T
= 40 A
150
A/
μ
s
non repetitive, I
T
= I
T(AV)M
500
A/
μ
s
(dv/dt)
cr
T
VJ
= T
VJM
;
R
GK
=
∞
; method 1 (linear voltage rise)
V
DR
= 2/3 V
DRM
1000
V/
μ
s
P
GM
T
VJ
= T
VJM
I
T
= I
T(AV)M
t
P
= 30
μ
s
t
P
= 300
μ
s
5
W
W
W
2.5
0.5
P
GAV
V
RGM
10
V
T
VJ
T
VJM
T
stg
-40...+150
°
C
°
C
°
C
150
-40...+150
V
ISOL
50/60 Hz RMS; I
ISOL
≤
1 mA
2500
V~
T
L
1.6mm from case; 10s
260
°
C
F
C
Mounting force
11...65 / 2.4...11
N / lb
Weight
2
g
Features
Features
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low cathode-to-tab capacitance (15pF
typical)
Planar passivated chips
Epoxy meets UL 94V-0
High performance glass
passivated chip
Long-term stability of leakage
current and blocking voltage
Applications
Motor control
Power converter
AC power controller
Light and temperature control
SCR for inrush current limiting
in power supplies or AC drive
Advantages
Space and weight savings
Simple mounting
98839 (5/01)
See CS 29..io1 data sheet for electrical characteristic curves.