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參數(shù)資料
| 型號(hào)： | CRS09 |
| 廠商： | Toshiba Corporation |
| 英文描述： | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 8.02 to 8.36; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK |
| 中文描述： | 開關(guān)電源的應(yīng)用 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 189K |
| 代理商： | CRS09 |
CRS09
2006-11-13
1
TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type
CRS09
Switching Mode Power Supply Applications
Portable Equipment Battery Applications
Forward voltage: V
FM
= 0.46 V (max)
Average forward current: I
F (AV)
= 1.5 A
Repetitive peak reverse voltage: V
RRM
= 30 V
Suitable for compact assembly due to small surface-mount package
“S
FLAT
TM
” (Toshiba package name)
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Symbol
Rating
Unit
Repetitive peak reverse voltage
V
RRM
30
V
Average forward current
I
F (AV)
1.5 (Note 1)
A
Peak one cycle surge forward current
(non-repetitive)
I
FSM
30 (50 Hz)
A
Junction temperature
T
j
40~150
°C
Storage temperature
T
stg
40~150
°C
Note 1: Ta
=
84°C
Device mounted on a ceramic board
(board size: 50 mm
×
50 mm, land size: 2 mm
×
2 mm)
Note 2: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
V
FM (1)
I
FM
=
0.1 A
0.35
V
FM (2)
I
FM
=
1.0 A
0.415
Peak forward voltage
V
FM (3)
I
FM
=
1.5 A
0.43
0.46
V
I
RRM (1)
V
RRM
=
5 V
0.8
Repetitive peak reverse current
I
RRM (2)
V
RRM
=
30 V
10
50
μ
A
Junction capacitance
C
j
V
R
=
10 V, f
=
1.0 MHz
90
pF
Device mounted on a ceramic board
(soldering land: 2 mm
×
2 mm)
70
Thermal resistance (junction to ambient)
R
th (j-a)
Device mounted on a glass-epoxy
board
(soldering land: 6 mm
×
6 mm)
140
°C/W
Thermal resistance (junction to lead)
R
th (j-
)
20
°C/W
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
3-2A1A
Weight: 0.013 g (typ.)
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| CRS11 | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 7.28 to 7.60; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK |
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| CRS12 | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 7.76 to 8.64; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK |
| CRS12_06 | Zener Diode; Application: General; Pd (mW): 200; Vz (V): 7.76 to 8.10; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK |
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