參數(shù)資料
型號(hào): CRS11_06
廠商: Toshiba Corporation
英文描述: Zener Diode; Application: General; Pd (mW): 200; Vz (V): 7.52 to 7.84; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK
中文描述: 開關(guān)電源的應(yīng)用
文件頁數(shù): 1/5頁
文件大?。?/td> 183K
代理商: CRS11_06
CRS11
2006-11-13
1
TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type
CRS11
Switching Mode Power Supply Applications
Portable Equipment Battery Applications
Forward voltage: V
FM
= 0.36 V (max)
Average forward current: I
F (AV)
= 1.0 A
Repetitive peak reverse voltage: V
RRM
= 30 V
Suitable for compact assembly due to small surface-mount package
“S
FLAT
TM
” (Toshiba package name)
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Symbol
Rating
Unit
Repetitive peak reverse voltage
V
RRM
30
V
Average forward current
I
F(AV)
1.0 (Note 1)
A
Peak one cycle surge forward current
(non-repetitive)
I
FSM
20 (50 Hz)
A
Junction temperature
T
j
40~125
°C
Storage temperature
T
stg
40~150
°C
Note 1: T
=
98.7°C: Rectangular waveform (
α
=
180°), V
R
=
15 V
Note 2: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
V
FM (1)
I
FM
=
0.1 A
0.20
V
FM (2)
I
FM
=
0.7 A
0.30
Peak forward voltage
V
FM (3)
I
FM
=
1.0 A
0.32
0.36
V
I
RRM (1)
V
RRM
=
5 V
0.06
Repetitive peak reverse current
I
RRM (2)
V
RRM
=
30 V
0.6
1.5
mA
Junction capacitance
C
j
V
R
=
10 V, f
=
1.0 MHz
60
pF
Device mounted on a ceramic board
(soldering land: 2 mm
×
2 mm)
70
Thermal resistance (junction to ambient)
R
th (j-a)
Device mounted on a glass-epoxy
board
(soldering land: 6 mm
×
6 mm)
140
°C/W
Thermal resistance (junction to lead)
R
th (j-
)
20
°C/W
Unit: mm
JEDEC
JEITA
TOSHIBA
3-2A1A
Weight: 0.013 g (typ.)
相關(guān)PDF資料
PDF描述
CRS12 Zener Diode; Application: General; Pd (mW): 200; Vz (V): 7.76 to 8.64; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK
CRS12_06 Zener Diode; Application: General; Pd (mW): 200; Vz (V): 7.76 to 8.10; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK
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