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參數(shù)資料
| 型號(hào)： | CR04AM600-8 |
| 廠商： | Powerex Power Semiconductors |
| 英文描述： | Lead-Mount, Phase Control SCR 0.4 Amperes/400-600 Volts |
| 中文描述： | 鉛山，相位控制晶閘管0.4 Amperes/400-600伏特 |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大小： | 75K |
| 代理商： | CR04AM600-8 |
Feb.1999
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR04AM
LOW POWER USE
GLASS PASSIVATION TYPE
10
2
10
–2
10
0
10
1
7
5
3
2
10
–1
7
5
3
2
10
0
7
5
3
2
7
5
3
2
10
–2
23 57
23 57
10
1
23 57
10
2
23 57
23
10
–1
V
FGM
= 6V
V
GT
= 0.8V
(T
j
= 25°C)
I
GT
= 100μA
(T
j
= 25°C)
P
GM
= 0.5W
P
G(AV)
= 0.1W
V
GD
= 0.2V
I
FGM
= 0.3V
2 3
10
0
7
5
3
2
5 710
1
2 3 5 710
2
2 3 5 710
3
10
1
2 3
10
–3
5 710
–2
2 3 5 710
–1
2 3 5 710
0
10
3
10
2
7
5
3
2
7
5
3
2
10
0
160
60
–20
–40
0
20 40
80 100120140
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
TYPICAL EXAMPLE
1.0
0.8
0.7
0.6
0.3
0.4
0.1
0
–40 –20
120
20
80
0.2
0.5
0.9
0
60
40
100
TYPICAL EXAMPLE
DISTRIBUTION
160
120
60
40
20
140
100
80
0
0.8
0
0.2
0.4
0.6 0.7
0.1
0.3
0.5
θ
= 30°
60° 120°
90°
180°
θ
360°
RESISTIVE,
INDUCTIVE
LOADS
NATURAL
CONVECTION
0.8
0.6
0.3
0.2
0.1
0.7
0.5
0.4
0
0.8
0
0.2
0.4
0.6 0.7
0.1
0.3
0.5
θ
360°
θ
= 30°
60°
120°
90°
180°
RESISTIVE, INDUCTIVE LOADS
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE HALF WAVE)
A
AVERAGE ON-STATE CURRENT (A)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO AMBIENT)
T
TIME (s)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
A
AVERAGE ON-STATE CURRENT (A)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
G
JUNCTION TEMPERATURE (°C)
G
GATE CURRENT (mA)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
GATE CHARACTERISTICS
1
G
j
G
j
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