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參數(shù)資料
| 型號： | CR05AS |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
| 中文描述： | 低功率的用途非絕緣型，平面型鈍化 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 67K |
| 代理商： | CR05AS |
Feb.1999
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR05AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
CR05AS
APPLICATION
Solid state relay, strobe flasher, ignitor, hybrid IC
I
T (AV)
........................................................................0.5A
V
DRM
..............................................................200V/400V
I
GT
.........................................................................100
μ
A
Symbol
V
RRM
V
RSM
V
R (DC)
V
DRM
V
D (DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
DC off-state voltage
8
1
8
1
Voltage class
Unit
V
V
V
V
V
MAXIMUM RATINGS
4 (marked “CB”)
200
300
160
200
160
8 (marked “CD”)
400
500
320
400
320
Symbol
I
T (RMS)
I
T (AV)
I
TSM
I
2t
P
GM
P
G (AV)
V
FGM
V
RGM
I
FGM
T
j
T
stg
—
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I
2t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Weight
Conditions
Commercial frequency, sine half wave, 180
°
conduction, T
a
=57
°
C
8
2
60Hz sine half wave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Unit
A
A
A
A
2
s
W
W
V
V
A
°
C
°
C
mg
Ratings
0.79
0.5
10
0.4
0.1
0.01
6
6
0.1
–40 ~ +125
–40 ~ +125
48
8
1. With Gate-to-cathode resistance R
GK
=1k
2
1
3
1
2
3
T
1
TERMINAL
T
2
TERMINAL
GATE TERMINAL
4.4±0.1
1.6±0.2
1.5±0.1
0.4±0.07
0
2
3
0.4
+0.03
1
2
3
(Back side)
OUTLINE DRAWING
Dimensions
in mm
SOT-89
0.5±0.07
1.5±0.11.5±0.1
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