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參數(shù)資料
| 型號(hào)： | CPH5862 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device |
| 中文描述： | MOSFET的：N溝道MOSFET的硅SBD智能交通：肖特基二極管通用開(kāi)關(guān)設(shè)備 |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大?。?/td> | 69K |
| 代理商： | CPH5862 |
CPH5862
No. A0464-3/5
Switching Time Test Circuit
[MOSFET]
4V
0V
trr Test Circuit
[SBD]
PW=10
μ
s
D.C.
≤
1%
P.G
50
G
S
D
ID=1A
RL=10
VDD=10V
VOUT
CPH5862
VIN
VIN
Duty
≤
10%
50
100
10
--5V
trr
1
1
1
10
μ
s
--60
--40
--20
0
20
40
60
80
100
120
140
160
0
1
2
Gate-to-Source Voltage, VGS -- V
y
fs
-- ID
3
4
5
6
50
100
150
200
250
300
0
7
8
9
10
IT02722
0
0
0.4
0.2
0.6
0.8
1.4
1.6
1.8
2.0
0.2
Drain-to-Source Voltage, VDS -- V
1.2
1.0
0
0.5
1.0
2.0
2.5
3.0
1.5
0.4
0.6
0.8
1.0
0.1
0.3
0.5
0.7
0.9
VGS=1.5V
6
2V
2V
4
IT02720
3
0
0.4
Gate-to-Source Voltage, VGS -- V
0.8
1.2
1.6
2.0
VDS=10V
2
°
C
-2
°
C
T=5
°
C
IT02721
IT02723
VGS=2.5V ID=0.5A
VGS=4.0V ID=1.0A
0
50
100
150
200
250
Ta=25
°
C
1.0A
ID=0.5A
S
O
Ambient Temperature, Ta --
°
C
IS -- VSD
RDS(on) -- Ta
RDS(on) -- VGS
S
O
ID -- VGS
D
ID -- VDS
D
IT02724
0.01
2
0.1
1.0
2
3
5
7
2
3
5
7
Drain Current, ID -- A
2
3
5
10
1.0
7
5
3
7
5
3
2
VDS=10V
75
°
C
25
°
C
Ta=-25
°
C
IT02725
0
0.2
0.4
0.6
0.8
1.0
1.2
0.01
0.1
10
1.0
7
5
3
2
7
5
3
2
7
5
3
2
VGS=0V
-
°
C
2
°
C
T7
°
C
F
y
f
Diode Forward Voltage, VSD -- V
S
[MOSFET]
[MOSFET]
[MOSFET]
[MOSFET]
[MOSFET]
[MOSFET]
1.4
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