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參數(shù)資料
| 型號： | CPH6001 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | High-Frequency Low-Noise Amplifier Applications |
| 中文描述： | 高頻低噪聲放大器的應用 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 47K |
| 代理商： | CPH6001 |
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
High-Frequency Low-Noise
Amplifier Applications
Ordering number:ENN6132A
CPH6001
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
60100TS (KOTO) TA-2924 No.6132–1/6
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Specifications
Absolute Maximum Ratings
at Ta = 25C
Package Dimensions
unit:mm
2146A
[CPH6001]
Features
· High gain :
S21e
2
=11dB typ (f=1GHz).
· High cutoff frequency : f
T
=6.7GHz typ.
· Small and slim 6-pin package.
· Large allowable collector dissipation (800mW max).
C
C
Electrical Characteristics
at Ta = 25C
1 : Collector
2 : Collector
3 : Base
4 : Emitter
5 : Collector
6 : Collector
SANYO : CPH6
Marking : GA
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| CPH6001A | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier Applications |
| CPH6001A_12 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:High-Frequency Low-Noise Amplifier Applications |
| CPH6001-A-TL-E | 制造商:ON Semiconductor 功能描述: |
| CPH6001A-TL-E | 功能描述:兩極晶體管 - BJT HIGH-CURRENT SWITCHING RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| CPH6002 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:NPN Epitaxial Planar Silicon Transistor High-Frequency Medium-Power Amplifier Applications |
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