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參數(shù)資料
| 型號： | CPH3338 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | P-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| 中文描述： | P溝道MOSFET的硅通用開關器件應用 |
| 文件頁數(shù)： | 6/11頁 |
| 文件大?。?/td> | 188K |
| 代理商： | CPH3338 |
SCDS134A SEPTEMBER 2003 REVISED OCTOBER 2003
6
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
PARAMETER MEASUREMENT INFORMATION
VOH
VOL
CL
(see Note A)
TEST CIRCUIT
S1
7 V
Open
GND
RL
RL
tPLH
tPHL
Output
Waveform 1
S1 at 7 V
(see Note B)
Output
Waveform 2
S1 at Open
(see Note B)
tPZL
tPZH
tPLZ
tPHZ
3 V
0 V
VOH
VOL
0 V
VOL + V
VOH V
0 V
Output
Control
(VIN)
3 V
3.5 V
VOLTAGE WAVEFORMS
PROPAGATION DELAY TIMES (tpd(s))
VOLTAGE WAVEFORMS
ENABLE AND DISABLE TIMES
Output
NOTES: A. CL includes probe and jig capacitance.
B. Waveform 1 is for an output with internal conditions such that the output is low except when disabled by the output control.
Waveform 2 is for an output with internal conditions such that the output is high except when disabled by the output control.
C. All input pulses are supplied by generators having the following characteristics: PRR
≤
10 MHz, ZO = 50
, tr
≤
2.5 ns, tf
≤
2.5 ns.
D. The outputs are measured one at a time with one transition per measurement.
E. tPLZ and tPHZ are the same as tdis.
F. tPZL and tPZH are the same as ten.
G. tPLH and tPHL are the same as tpd(s). The tpd propagation delay is the calculated RC time constant of the typical ON-state
resistance of the switch and the specified load capacitance, when driven by an ideal voltage source (zero output impedance).
H. All parameters and waveforms are not applicable to all devices.
1.5 V
1.5 V
1.5 V
1.5 V
1.5 V
1.5 V
1.5 V
1.5 V
50
VG1
VCC
DUT
50
VIN
50
VG2
50
VI
TEST
RL
500
500
S1
V
CL
5 V
±
0.5 V
4 V
VCC
VI
tPHZ/tPZH
tPLZ/tPZL
tpd(s)
5 V
±
0.5 V
4 V
5 V
±
0.5 V
4 V
Open
Open
7 V
7 V
Open
Open
500
500
500
500
VCC or GND
VCC or GND
GND
GND
VCC
VCC
50 pF
50 pF
50 pF
50 pF
50 pF
50 pF
0.3 V
0.3 V
0.3 V
0.3 V
Output
Control
(VIN)
Input Generator
Input Generator
VO
Figure 3. Test Circuit and Voltage Waveforms
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| CPH3338-TL-H | 制造商:Rochester Electronics LLC 功能描述: 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET P CH 30V 3.5A SOT346 制造商:Sony Semiconductor Solutions Division 功能描述: |
| CPH3340-TL-E | 功能描述:MOSFET P-CH 20V 5A CPH3 RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| CPH3341 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET General-Purpose Switching Device |
| CPH3341-TL-E | 功能描述:MOSFET P-CH 30V 5A CPH3 RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| CPH3345 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET General-Purpose Switching Device |
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