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參數(shù)資料
| 型號(hào)： | CPH3338 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | P-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| 中文描述： | P溝道MOSFET的硅通用開關(guān)器件應(yīng)用 |
| 文件頁數(shù)： | 1/11頁 |
| 文件大小： | 188K |
| 代理商： | CPH3338 |
SCDS134A SEPTEMBER 2003 REVISED OCTOBER 2003
1
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
Member of the Texas Instruments
Widebus
Family
Undershoot Protection for Off-Isolation on
A and B Ports Up To 2 V
Bidirectional Data Flow, With Near-Zero
Propagation Delay
Low ON-State Resistance (r
on
)
Characteristics (r
on
= 3
Typical)
Low Input/Output Capacitance Minimizes
Loading and Signal Distortion
(C
io(OFF)
= 5.5 pF Typical)
Data and Control Inputs Provide
Undershoot Clamp Diodes
Low Power Consumption
(I
CC
= 3
μ
A Max)
V
CC
Operating Range From 4 V to 5.5 V
Data I/Os Support 0 to 5-V Signaling Levels
(0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
Control Inputs Can Be Driven by TTL or
5-V/3.3-V CMOS Outputs
I
off
Supports Partial-Power-Down Mode
Operation
Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
ESD Performance Tested Per JESD 22
2000-V Human-Body Model
(A114-B, Class II)
1000-V Charged-Device Model (C101)
Supports Both Digital and Analog
Applications: PCI Interface, Memory
Interleaving, Bus Isolation, Low-Distortion
Signal Gating
description/ordering information
ORDERING INFORMATION
TA
PACKAGE
ORDERABLE
PART NUMBER
TOP-SIDE
MARKING
SSOP DL
Tube
SN74CBT16244CDL
CBT16244C
Tape and reel
Tube
SN74CBT16244CDLR
SN74CBT16244CDGG
40 C to 85 C
TSSOP DGG
CBT16244C
Tape and reel
SN74CBT16244CDGGR
TVSOP DGV
Tape and reel
SN74CBT16244CDGVR
CY244C
Package drawings, standard packing quantities, thermal data, symbolization, and PCB design
guidelines are available at www.ti.com/sc/package.
Copyright
2003, Texas Instruments Incorporated
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1OE
1B1
1B2
GND
1B3
1B4
V
CC
2B1
2B2
GND
2B3
2B4
3B1
3B2
GND
3B3
3B4
V
CC
4B1
4B2
GND
4B3
4B4
4OE
2OE
1A1
1A2
GND
1A3
1A4
V
CC
2A1
2A2
GND
2A3
2A4
3A1
3A2
GND
3A3
3A4
V
CC
4A1
4A2
GND
4A3
4A4
3OE
DGG, DGV, OR DL PACKAGE
(TOP VIEW)
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
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Widebus is a trademark of Texas Instruments.
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| CPH3410 | Ultrahigh-Speed Switching Applications |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CPH3338-TL-H | 制造商:Rochester Electronics LLC 功能描述: 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET P CH 30V 3.5A SOT346 制造商:Sony Semiconductor Solutions Division 功能描述: |
| CPH3340-TL-E | 功能描述:MOSFET P-CH 20V 5A CPH3 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| CPH3341 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET General-Purpose Switching Device |
| CPH3341-TL-E | 功能描述:MOSFET P-CH 30V 5A CPH3 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| CPH3345 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET General-Purpose Switching Device |
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