參數(shù)資料
型號(hào)： CPH3322
廠商： Sanyo Electric Co.,Ltd.
英文描述： Ultrahigh-Speed Switching Applications
中文描述： 超高速開(kāi)關(guān)應(yīng)用
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 32K
代理商： CPH3322
CPH3322
No.7748-1/4
13004 TS IM TA-100223
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
CPH3322
P-Channel Silicon MOSFET
Ultrahigh-Speed Switching
Applications
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
Ratings
Unit
V
V
A
A
W
°
C
°
C
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
--60
±
20
--0.6
--2.4
0.9
150
PW
≤
10
μ
s, duty cycle
≤
1%
Mounted on a ceramic board (900mm
2
0.8mm)
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
ID= --1mA, VGS=0
VDS= --60V, VGS=0
VGS=
±
16V, VDS=0
VDS= --10V, ID= --1mA
VDS= --10V, ID= --300mA
ID= --0.3A, VGS= --10V
ID= --0.3A, VGS= --4V
VDS= --20V, f=1MHz
VDS= --20V, f=1MHz
VDS= --20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
--60
V
μ
A
μ
A
V
S
pF
pF
pF
ns
ns
ns
ns
--1
±
10
--2.6
--1.2
0.46
0.67
1.3
1.6
Static Drain-to-Source On-State Resistance
1.7
2.3
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
73
7
4
6
3.5
12.5
3
Continued on next page.
Ordering number : ENN7748
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
相關(guān)PDF資料
PDF描述
CPH3323 Ultrahigh-Speed Switching Applications
CPH3324 General-Purpose Switching Device Applications
CPH3337 General-Purpose Switching Device Applications
CPH3338 P-Channel Silicon MOSFET General-Purpose Switching Device Applications
CPH3410 Ultrahigh-Speed Switching Applications
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CPH3323 制造商:SANYO 制造商全稱(chēng):Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications
CPH3323-TL-E 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET P CH 60V 1A SOT346
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CPH3325 制造商:SANYO 制造商全稱(chēng):Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET General-Purpose Switching Device
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