參數(shù)資料
型號(hào): CP1016
英文描述: TRANSISTOR | BJT | DARLINGTON | PNP | 150V V(BR)CEO | 10A I(C) | TO-247VAR
中文描述: 晶體管|晶體管|達(dá)林頓|進(jìn)步黨| 150伏五(巴西)總裁| 10A條一(c)|至247VAR
文件頁(yè)數(shù): 1/2頁(yè)
文件大?。?/td> 41K
代理商: CP1016
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
PNP SILICON PLASTIC POWER DARLINGTON TRANSISTOR
CP1016
(9AW)
TO-3P
MARKING:- CP
1016
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)
DESCRIPTION
Collector -Base Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current
Peak t=30ms
Base Current
Collector Power Dissipation @ Tc=25 deg C
Junction Temperature
Storage Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified)
DESCRIPTION
Collector Cut off Current
Emitter Cut off Current
Collector Emitter Voltage
DC Current Gain
SYMBOL
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
VALUE
160
150
5.0
10
15
1.0
60
150
-55 to +150
UNIT
V
V
V
A
A
A
W
deg C
deg C
SYMBOL
ICBO
IEBO
VCEO
hFE
TEST CONDITION
VCB=160V, IE=0
VEB=5V, IC=0
IC=30mA, IB=0
IC=6A, VCE=4V
IC=10A, VCE=4V
IC=6A, IB=6mA
IC=6A, IB=6mA
MIN
-
-
150
2.0
1.0
-
-
TYP
-
-
-
-
-
-
-
MAX
100
3.0
-
20
-
2.5
3.0
UNIT
uA
mA
V
K
K
V
V
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Dynamic Characteristics
Transition Frequency
Collector Output Capacitance
VCE(Sat)
VBE(Sat)
ft
Cob
VCE=12V, IC=1A,
VCB=10V, IE=0
f=1MHz
-
-
65
160
-
-
MHz
pF
IS / IECQC 700000
IS / IECQC 750100
IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
Data Sheet
Page 1 of 2
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